小型高画素CCD用アバランシェ素子構造の検討 : 情報入力,情報ディスプレイ,コンシューマエレクトロニクス
1992 年 16 巻 75 号 p. 1-6
詳細
1992 年 16 巻 75 号 p. 1-6
A MOS Si-APD image sensor cell without avalanche multiplication during readout period was proposed and simulated for 5.2×5μm^2 photosite. From the simulation results, proposed MOS-APD cell shows three times larger sensitivity than the conventional photosite without any edge breakdown under 20V driving voltage.
