テレビジョン学会技術報告
Online ISSN : 2433-0914
Print ISSN : 0386-4227
PERFORMANCE IMPROVEMENT OF A-SI TFT PRODUCED BY ATMOSPHERIC PRESSURE CVD : TFT TECHNOLOGIES
Jin JangByeong Yeon MoonKyung Ha LeeJung Hyun KimDonggjl KimByung Chul AhnChoochon Lee
著者情報
キーワード: APCVD, a-Si, TFT, Hydrogenation, Ion shower
研究報告書・技術報告書 フリー

1993 年 17 巻 63 号 p. 19-23

詳細
抄録

We have studied the performance improvement of atmospheric pressure (AP) CVD a-Si thin film transistors. The N_2 plasma treatment and hydrogenation improve the performance of APCVD a-Si TFT significantly. The ion doped a-Si layer was used to make ohmic contact for the inverse staggered type TFTs. We obtained the field effect mobility of 1.05 cm^2/Vs and the threshold voltage of 6.3V. Therefore, we can increase the production throughput of a-Si TFT arrays by using APCVD a-Si and SiO_2 layers

著者関連情報
© 1993 The Institute of Image Information and Television Engineers
前の記事 次の記事
feedback
Top