1994 年 18 巻 16 号 p. 19-24
A 1/4 inch format 250K pixel amplified MOS image sensor has been developed with CMOS process. We have developed a new circuit technique using 0.8μm design rule to achieve redaction of a pixel size while realizing vertical two line mixing and high sensitivity. Considering high speed operation and stacking photoconversion layers, we have designed scanner circuits and photodiode potential. As a result, a dynamic range of 75dB and a sensitivity of 1.8 μA/1x have been attained In the pixel size of 7. 2(H)x5. 6(V) μm^2. Also we confirmed high speed operation up to a HDTV data rate.