微細化にともなうAMIのFPN : 情報入力
1994 年 18 巻 29 号 p. 31-36
詳細
1994 年 18 巻 29 号 p. 31-36
We have developed a 250K pixel amplifying type solid-state imaging sensor(AMI) of a 1/4 inch format with a new circuit technique using 0.8 μm design rule. Simultaneously we have developed a test device for fixed pattern noise (FPN), and actually measured it. The FPN of AMI is not affected by the gate length of mixing transistor Tg and switching transistor Ty, but also largely by the gate length of amplifying transistor Ta and resetting transistor Tr. The correlation index of them is observed to be 25 for Ta, and 20 for Tr.
