Large size diagonal multicolor LCD is of interest for note-book PC development at present market trend. However, when the highly resistant materials such as Cr or Ta is used as gate bus line, the gate pulse is delayed and its waveform is distorted at the other end of the panel as gate bus line panel display. Al is a material with low resistivity and ' suitable for large panel display, however it gives rise to hillocks due to different thermal expansion coefficient between Al and SiNx during thermal processing and generates defects resulting in shorts between the electrodes. A12O3 film has been proposed to be the best pretective layer against hillock formation prepared by anodic oxidation. In this study. Al2O3/SiNx dielectric films suitable for large size a-Si:H TFTLCD have been prepared by anodization and PECVD. Al2O3 layers were formed at various pH value. and H2O% in anodic solution.
