新フォトダイオード構造を用いた低スミア・高感度200万画素IT-CCD

抄録

A new photodiode structure has been developed to reduce smear and to increase photo-sensitivity in CCD image sensors. The new structure features a wide, low-concentration N^- layer formed below the conventional photodiode N layer. The new photodiode was designed by using a new parameter deduced from simulated potential-profiles to help optimize the N^- layer conditions. The new structure was applied to a 2/3-inch 2M pixel interline-transfer CCD (IT-CCD) image sensor, and it has achieved a low smear (-85dB) as well as high sensitivity (35 nA/lx).