Post-annealing Effects on the Characteristics of Poly-Si TFT's

抄録

The amorphous silicon films deposited by low pressure chemical vapor deposition are crystallized by the various annealing techniques including low-temperature furnace annealing, excimer laser annealing and two-step annealing. Two-step annealing, which is the combination of furnace annealing at 600 ℃ for 24h and the sequential furnace annealing at 950 ℃/1h or the excimer laser annealing, is found to reduce the in-grain defects significantly without changing the grain boundary structure. As a consequence, the performance of the poly-Si thin film transistors (TFT's) produced by employing the two-step annealing has been improved remarkably if compared with those of one-step annealing.