2018 Volume 61 Issue 12 Pages 766-771
In-situ transmission electron microscopy (in-situ TEM) has been applied to understand the operation mechanism of resistive random access memories (ReRAMs) and their device degradation and failure. Formation and erasure of the conductive filament (CF) was experimentally confirmed to contribute the ReRAM operation. Very tiny CF was formed at the resistance change, and it grew much with subsequent current flow. Realistic device structure was also investigated.