Vacuum and Surface Science
Online ISSN : 2433-5843
Print ISSN : 2433-5835
Special Issue : Frontier in Nanoscale Three-Dimensional Analysis
In-situ TEM of Nanoscale ReRAM Devices
―Operation and Device Microstructure―
Masashi ARITAAtsushi TSURUMAKI-FUKUCHIYasuo TAKAHASHI
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2018 Volume 61 Issue 12 Pages 766-771

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Abstract

In-situ transmission electron microscopy (in-situ TEM) has been applied to understand the operation mechanism of resistive random access memories (ReRAMs) and their device degradation and failure. Formation and erasure of the conductive filament (CF) was experimentally confirmed to contribute the ReRAM operation. Very tiny CF was formed at the resistance change, and it grew much with subsequent current flow. Realistic device structure was also investigated.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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