2018 Volume 61 Issue 3 Pages 172-176
Silver oxide (Ag2O) is known to be a p-type semiconductor with a narrow band gap (1.2 eV). Lower temperature processes are needed to form the oxide films because the oxide is reduced by heat-treatment over 200°C by dissociating the oxygen. This report describes fabrication of silver oxide films at lower temperatures using a reactive plasma assisted deposition with applying a substrate bias voltage (Vs). According to XRD analyses, silver films have been deposited by bias free deposition with a lower oxygen partial pressure while mixture of Ag2O and Ag films have been fabricated with a high oxygen partial pressure. In the higher oxygen partial pressure environment, applying a substrate bias made silver react to oxidize such that Ag2O films were fabricated by applying a Vs = −20 V, and −40 V. The device structure of silver oxide film deposited on n/n+-Si showed good rectifying I-V curve and 0.25 V built-in potential.