Vacuum and Surface Science
Online ISSN : 2433-5843
Print ISSN : 2433-5835
Transaction of the Joint Conference on Vacuum and Surface Science 2017 [I]
High Resolution Characterizations of Semiconductor Device Using Scanning Nonlinear Dielectric Microscopy
Yasuo CHO
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2018 Volume 61 Issue 4 Pages 221-226

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Abstract

Scanning nonlinear dielectric microscopy (SNDM) can easily distinguish the dopant type (pn) and has a wide dynamic range of sensitivity from low to high concentrations of dopants, because it has a high sensitivity to capacitance variation on the order of 10−22 F. It is also applicable to the analysis of compound semiconductors with much lower signal levels than Si. We can avoid misjudgments from the two-valued function (contrast reversal) problem of dC/dV signals. As the extended versions of SNDM, super-higher-order SNDM, local-deep-level transient spectroscopy have been developed and introduced. The favorable features of SNDM originate from its significantly high sensitivity.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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