表面と真空
Online ISSN : 2433-5843
Print ISSN : 2433-5835
2017年真空・表面科学合同講演会特集号 [I]
走査型プローブ顕微鏡(非線形誘電率顕微鏡)を用いたデバイス観察
長 康雄
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2018 年 61 巻 4 号 p. 221-226

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Scanning nonlinear dielectric microscopy (SNDM) can easily distinguish the dopant type (pn) and has a wide dynamic range of sensitivity from low to high concentrations of dopants, because it has a high sensitivity to capacitance variation on the order of 10−22 F. It is also applicable to the analysis of compound semiconductors with much lower signal levels than Si. We can avoid misjudgments from the two-valued function (contrast reversal) problem of dC/dV signals. As the extended versions of SNDM, super-higher-order SNDM, local-deep-level transient spectroscopy have been developed and introduced. The favorable features of SNDM originate from its significantly high sensitivity.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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