表面と真空
Online ISSN : 2433-5843
Print ISSN : 2433-5835
2017年真空・表面科学合同講演会特集号 [II]
熱電応用に向けたナノドット含有階層構造によるフォノン散乱の促進
中村 芳明谷口 達彦寺田 吏
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2018 年 61 巻 5 号 p. 296-301

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Si films including hierarchical nanodot structures were developed using ultrathin SiO2 films. Scattering bodies with various size scales are expected to scatter phonons with various wavelengths. This idea is important for reduction of thermal conductivity because phonon, that is boson, with various wavelengths, can contribute to the heat transport. Here, in Si films including Si nanodot structures, the nanodots with various sizes reduced the thermal conductivity effectively in addition to increase of dopant activation rates. Furthermore, highly-doped Si films including Ge nanodots that have atomic scale and nanoscale phonon scattering bodies exhibited drastically-reduced thermal conductivity. This drastic reduction of thermal conductivity came from hierarchical structures that include nanodot structures working as strong phonon scattering bodies. This gives the guideline of control of phonon and carrier transport using nanostructures for high performance thermoelectric materials.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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