Vacuum and Surface Science
Online ISSN : 2433-5843
Print ISSN : 2433-5835
Regular article
Low–pressure Deposition of CoPtCr–SiO2 Granular Films by Ar+O2 Reactive Sputtering Using CoPtCrSi Target
Shingo SASAKIKim Kong THAMShintaro HINATAShin SAITO
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2018 Volume 61 Issue 7 Pages 469-473

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Abstract

To improve the surface flatness, impact and corrosion resistance of magnetic recording media, low–pressure (0.6 Pa) deposition of CoPtCr–SiO2 granular films by Ar+O2 reactive sputtering using a Co65Pt14Cr9Si12 target was investigated. It was found that as the fraction of oxygen in the sputtering gas flow (FO2) was increased from 0 to 20%, the deposition rate increased from 2.8 to 4.3 nm/s, and then decreased to 1.1 nm/s as FO2 was further increased. For FO2=10–12%, the designed composition with the desired oxygen content (Co74Pt16Cr10–8 mol%SiO2) could be achieved. For FO2=8%, while a flat surface granular film with c-plane oriented CoPtCr grains was realized, a slight amount of Si remaining in magnetic grains which indicated the insufficient segregation of SiO2 into the grain boundaries was observed.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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