CoPtCrSiターゲットの酸素リアクティブスパッタリングによるCoPtCr–SiO₂グラニュラー薄膜の低ガス圧成膜

抄録

To improve the surface flatness, impact and corrosion resistance of magnetic recording media, low–pressure (0.6 Pa) deposition of CoPtCr–SiO₂ granular films by Ar＋O₂ reactive sputtering using a Co₆₅Pt₁₄Cr₉Si₁₂ target was investigated. It was found that as the fraction of oxygen in the sputtering gas flow (F_O2) was increased from 0 to 20%, the deposition rate increased from 2.8 to 4.3 nm/s, and then decreased to 1.1 nm/s as F_O2 was further increased. For F_O2＝10–12%, the designed composition with the desired oxygen content (Co₇₄Pt₁₆Cr₁₀–8 mol%SiO₂) could be achieved. For F_O2＝8%, while a flat surface granular film with c-plane oriented CoPtCr grains was realized, a slight amount of Si remaining in magnetic grains which indicated the insufficient segregation of SiO₂ into the grain boundaries was observed.