2019 Volume 62 Issue 10 Pages 611-616
Transition metal dichalcogenides (TMDs), a group of 2-dimensional layered materials, show excellent physical properties. In spite of its high expectations, the synthesis of TMDs is not yet well-established. Here, we show studies of sputtering deposition for fabrication of TMDs. Sputtering shows high uniformity, high controllability of the thickness, and suppression of impurities. Application of DC bias was employed to prevent sulfur loss during deposition. Each sputtering condition was also rigorously examined, and as a result, high quality films with S/Mo satisfying 2.0 and Hall mobility of approximately 300 cm2 V－1 s－1 were fabricated. The sputtering parameters were expressed in terms of “ion bombardment parameter” to reveal the relation between the deposition parameters and the film quality. Alloys of TMD were also fabricated with well-controlled composition. The relation between alloy formations and the deposition or thermal treatment condition was revealed which is crucial in order to produce films without phase segregation.
