Vacuum and Surface Science
Online ISSN : 2433-5843
Print ISSN : 2433-5835
Special Feature : Transactions of the Annual Meeting on the Japan Society of Vacuum and Surface Science 2018 [II]
Development of Methods of Creating and Observing Atomically-ordered Side-surfaces on Three-dimensionally Architected Si Substrates
Azusa N. HATTORIShohei TAKEMOTOHaoyu YANGKen HATTORIHiroshi DAIMONHidekazu TANAKA
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2019 Volume 62 Issue 7 Pages 427-432

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Abstract

We have established the original methodology that enable to observe atomic orderings and arrangements of “surfaces with arbitrary directions” on 3D figured structures, by developing diffraction and microscopy techniques. An original technique, namely, the directly and quantitatively viewing of the side- and facet-surfaces in atomic scale using reflection high-energy electron diffraction (RHEED) and scanning tunneling microscope (STM), can feedback to the determination of process parameters in the etching procedure. The scientifically optimized etching recipe enabled the creation of atomically-ordered side-surfaces, which are perpendicular to planar substrate surfaces on 3D patterned Si substrates. RHEED and STM prove atomically-reconstructed Si{100}2×1, {110}16×2, and {111}7×7 side-surfaces that were realized for the first time. We have also developed the atomically-ordered 3D nanofabrication technique, where the material stacking direction is switched from the general out-of-plane to in-plane direction, and realized the formation ultra-thin epitaxial films in 3D space.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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