特集「2018年日本表面真空学会学術講演会特集号II」
高純度オゾンガスとエチレンガス由来の活性種を用いた新たな低温成膜法
2019 年 62 巻 7 号 p. 433-438
詳細
2019 年 62 巻 7 号 p. 433-438
We have succeeded in the formation of SiO2 and Al2O3 films at room temperature using a large amount of chemically active species produced after mixing high purity ozone gas and ethylene gas (OER) to be utilized in chemical vapor deposition process (OER-CVD) and atomic layer deposition process (OER-ALD), respectively. Although a SiO2 film was formed by OER-CVD at room temperature, it showed comparable characteristics to that conventionally formed at high temperature. The OER-CVD and the OER-ALD are expected to enable various kinds of oxide film deposition (e.g., TiO2, ZnO) at lower temperature.
