2020 Volume 63 Issue 5 Pages 229-234
We proposed a cavity-free planar device architecture of a Si-nanowire (NW) thermoelectric (TE) power generator with high affinity for Si-LSI process technology. In this generator, an external temperature difference is induced between a front-side and backside of the substrate without cavity. Thus, most of induced heat energy is wasted to the substrate. However, a diffused heat flow to in-plane direction maintains a temperature difference in the Si nanowires. The exuded heat flux formed a steep temperature gradient in Si-NWs. Then, the 10-µW/cm2 class high power is generated by our TE generator. In this paper, the design concept of the new Si-NW based TE generator is presented. A numerical and experimental demonstration of test devices is reviewed. The possibility of large-scale integration is discussed by designing the structure of our TE generator.