Reports of the Technical Conference of the Institute of Image Electronics Engineers of Japan
Online ISSN : 2758-9218
Print ISSN : 0285-3957
Reports of the 212th Technical Conference of the Institute of Image Electronics Engineers of Japan
Session ID : 04-03-01
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Fabrication and Highly-Efficient-Izing of Back-Irradiation Type Photocathode Using Field Emitter
*Yoshio TANDATakashi ONOKazuaki SAWADAHidekuni TAKANOMakoto ISHIDA
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Abstract

Photo detectors are configured by photocathode and electron multiplier like the Photomultiplier Tube. But the quantum efficiency of the photocathode is low as approximately 20-30%. Then we make a suggestion the new structure back irradiation photocathode. The photocathode is combined the photodiode and the field emitter. The quantum efficiency of the photodiode is approximately 100%.The device which applies the SOS substrate has high quantum efficiency of 70%. We fabricate the device which uses the bulk Si substrate for more high performance and application to image sensor.

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© 2004 by The Institute of Image Electronics Engineers of Japan
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