エピタキシャルγ-Al2O3/Si基板上のエピタキシャルPZT薄膜を利用した焦電型赤外線センサ

赤井 大輔; 平林 京介; 余川 三香子; 澤田 和明; 谷口 義晴; 村重 伸一; 中山 直人; 山田 哲也; 村上 健介; 石田 誠

doi:10.11371/wiieej.05-04.0_27

Reports of the 221st Technical Conference of the Institute of Image Electronics Engineers of Japan

Session ID : 05-04-06

DOI https://doi.org/10.11371/wiieej.05-04.0_27

Conference information

Co-host: The Institute of Image Electronics Engineers of Japan, The Institute of Image Information and Television Engineers, The Institute of Electrical Engineers of Japan

13:30-16:30 Chair: Hirotaka MARUYAMA, NHK Science & Technical Research Laboratories

Pyroelectric Infrared Sensors using Epitaxial PZT Thin Films on Epitaxial γ-Al₂O₃/Si Substrates

*Daisuke AKAI, Keisuke HIRABAYASHI, Mikako YOKAWA, Kazuaki SAWADA, Yoshiharu TANIGUCHI, Shinnichi MURASHIGE, Naoto NAKAYAMA, Tetsuya YAMADA, Kensuke MURAKAMI, Makoto ISHIDA

Author information

*Daisuke AKAI
Venture Business Laboratory, Toyohashi University of Technology
Keisuke HIRABAYASHI
Department of Electrical & Electronic Engineering, Toyohashi University of Technology
Mikako YOKAWA
Department of Electrical & Electronic Engineering, Toyohashi University of Technology
Kazuaki SAWADA
Department of Electrical & Electronic Engineering, Toyohashi University of Technology
Yoshiharu TANIGUCHI
Nippon Ceramic Co.,Ltd.
Shinnichi MURASHIGE
Nippon Ceramic Co.,Ltd.
Naoto NAKAYAMA
Nippon Ceramic Co.,Ltd.
Tetsuya YAMADA
Nippon Ceramic Co.,Ltd.
Kensuke MURAKAMI
Nippon Ceramic Co.,Ltd.
Makoto ISHIDA
Venture Business Laboratory, Toyohashi University of Technology
Department of Electrical & Electronic Engineering, Toyohashi University of Technology

Keywords: Al₂O₃, IR detector, pyroelectric, PZT, Si integrated

CONFERENCE PROCEEDINGS RESTRICTED ACCESS

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Abstract

In this report, we report that a pyroelectric infrared (IR) sensor using epitaxial Pb(Zr,Ti)O3 (PZT) thin films on γ-Al₂O₃/Si substrates has successfully fabricated for the first time. The fabricated sensor operated under chopping frequency of 100 Hz. The values of output signals were 1.6 mVp-p, 0.8 mVp-p and 0.5 mVp-p with the chopping frequencies of 20 Hz, 50 Hz and 100 Hz, respectively. This sensor will have potentials for Si integrated sensing systems

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