巻号一覧
10 巻 (1961 - 1962)
- 4 号 p. 181-
- 3 号 p. 131-
- 2 号 p. 83-
- 1 号 p. 1-
10 巻, 4 号
選択された号の論文の5件中1～5を表示しています
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植村 琢1962 年 10 巻 4 号 p. 181-183
発行日: 1962/08/31
公開日: 2010/06/28
ジャーナル フリーPDF形式でダウンロード (461K) -
座談会1962 年 10 巻 4 号 p. 183-189
発行日: 1962/08/31
公開日: 2010/06/28
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築山 宏, 若林 忠男1962 年 10 巻 4 号 p. 190-202
発行日: 1962/08/31
公開日: 2010/06/28
ジャーナル フリーX-ray spectrochemical analysis is successfully applied to determine TFe, MnO, CaO, P205, Si02, Al2O3 in slags and cement by the use of X-ray quantorecorder which can analyze simultaneously up to twelve elements that compose the samples in one to five minutes.
Each of the samples is briquetted in Al-ring of 27 mm dia.by a press at 10, 000 kg to avoid errors caused by ununiformity of packing.
The errors of analysis found from working curves are comparable to theoretical errors calculated from reproducibility.This gives the possibility of applying the above method to rapid analysis of quality control in iron or steel and cement industries.抄録全体を表示PDF形式でダウンロード (2972K) -
中島 篤之助, 河口 広司, 高島 教一郎1962 年 10 巻 4 号 p. 202-206
発行日: 1962/08/31
公開日: 2011/02/23
ジャーナル フリーAn apparatus is devised for the evaporation method or preliminary fractional distillation method in spectrographic analysis.As in a similar equipment described by Pszoniski, electric resistance heating is used, and a graphite crucible containing the sample serves as the heating element. Temperature measurements are carried out with a specially designed radiation pyrometer using a photomultiplier tube 931A.Electric current is controlled with the aid of a motor-driven moving iron core reactor.Volatile impurities are evaporated and collected on the top of a graphite or copper rod which is then used as the sample electrode for spectrographic determination.Distillation is carried out in air.抄録全体を表示PDF形式でダウンロード (2296K) -
佐藤 健蔵1962 年 10 巻 4 号 p. 206-214
発行日: 1962/08/31
公開日: 2011/02/23
ジャーナル フリーInfrared absorption spectroscopy is being adopted to investigate the band structure and impurity-energy levels of semiconductor materials such as Si and Ge, etc.Usually the wave length regions for investigating these problems are 1-2/μfor band structure and 20-50μfor impurity levels.
In the region of 5-16μ, optical interference phenomenon of thin wafers, 50-200μ in thickness, made of Si and Ge single crystals is studied by infrared absorption spectroscopy.
The interference was found very sensitive for the thickness and surface treatment of the crystals.抄録全体を表示PDF形式でダウンロード (6883K)
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