PTFE (polytetrafluoroethylene) and PFA(perfluoroalkoxy) have been widely used in the semiconductor industry due to their chemical inertness, thermal stability and low impurity concentration. We therefore need to find a technique to determine an ultratrace amount of metals in fluorocarbon resin, which is a raw material of PTFE and PFA. We developed a new procedure in which a fluorocarbon resin is placed on a silicon(Si) wafer set in a combustion chamber made of quartz and locate the chamber in an electric furnace. We decomposed the resin at 550°C in air and etched about 0.2 μm of the surface layer of the wafer using an acid mixture of HF and HNO
3 (1/20 by volume), and determined Na, Al, K, Ca, Cr, Fe, Ni, Cu and Zn in the etching solution using GFAAS with low blank concentrations of 0.05, 0.4, 0.07, 0.2, 0.2, 0.3, 0.3, 0.2 and 0.9 ng g
-1, respectively. We confirmed that this technique gave a low blank concentration and was a rapid and accurate analytical method for fluorocarbon resin.
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