We studied the anomalous fshaviors of electrical resistance and Hall effect of semi-conductors at low temperature, using the excited impurity band model. Under the assumption of the existence of excited impurity bands, we investigated the electrical properties of semi-conductors and compared the results with experimental data. It is shown that the agreement between them is fairly well, and that Fritzsche's data on Ga-doped Ge can be interpreted, assuming at least two non-overlapping excited bands.
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