Backscatter dose perturbation at high atomic number materials with a 2.8MV linac X-ray beam was studied using an absorbed dose distribution image generated by a microphotometer/microcomputer system. The absorbed dose distribution image clealy demonstrated the dose enhancement by backscatter electrons at the interface of high atomic number materials. A specially-made ready pack film (SR-IC metal pack film), in which single emulsion film (SR-IC: KONICA) and a high Z metal plate were packed, was used to measure the dose at the metal interface, and electron attenuation in a very thin layer (less than 50mg/cm
2) was investigated. The dose distribution image obtained using XV-2 film was estimated to be that at a depth of 32mg/cm
2 depth from the metal surface. The enhanced dose ratio (R
ed=(D
1-D
0)/D
0×100(%); where D
1 is the absorbed dose at the metal interface and D
0 is the absorbed dose in homogeneous soft tissue) was highly correlated with the square root of the mean atomic number (Z
*) of backscatterer calculated by Z
*=∑w
iZ
i, (where w
i is the percent of weight of Z
i). The linear regression equation obtained for XV-2 film was R
ed=9.11√Z
*-23.3 (r=0.999) and that for SR-IC metal pack film was R
ed=16.91√Z
*-45.4 (r=0.999). These equations were used to calculate the 32mg/cm
2 depth dose and the exact surface dose for any mixture or alloy. Backscatter electron attenuation was investigated using XV-2 film and paraffin wax in order to estimate the optimum shielding thickness for protecting the oral mucosa. R
ed exponentially decreased as the thickness of the wax increased. The attenuation coefficients (μ
se) were evaluated corresponding to the mean atomic number of backscatterer. The optimum shielding thickness (S
0) corresponding to the mean atomic number was calculated using the equation R
ed(S
0)=R
ed(0)·exp(-μ
se(Z
*)·S
0), where R
ed (0) and R
ed (S
0) is the enhanced dose ratio with and without shielding materials, respectively. When permissible the enhanced dose ratio (R
ed (S
0)) is 2 or 5%, and the corresponding optimum shielding thickness can be calculated by above equation by substituting appropriate values for R
ed (0) and μ
se (Z
*).
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