Electrochemistry
Online ISSN : 2186-2451
Print ISSN : 1344-3542
ISSN-L : 1344-3542
72 巻, 6 号
選択された号の論文の27件中1~27を表示しています
展望
Headline
  • Hideki MASUDA, Futoshi MATSUMOTO, Kazuyuki NISHIO
    2004 年 72 巻 6 号 p. 389-394
    発行日: 2004/06/05
    公開日: 2019/06/08
    ジャーナル フリー

    Two types of preparation processes for highly ordered hole array structures of anodic porous alumina are described. In the naturally occurring ordering, long-range ordered hole configuration was obtained under appropriate anodization conditions. The pretexturing process using a mold yielded ideally ordered hole configuration with a single domain structure over the sample. Obtained highly ordered anodic porous alumina membranes were applied to preparation of several types of functional nanodevices. In addition, replication processes using highly ordered anodic porous alumina as a starting structure are described. Highly ordered metal and semiconductor hole arrays prepared by the replication processes were applied to the preparation of several types of functional electrodes.

コミュニケーション
報文
  • El-Maghraby MOHAMED, Yuuko NAKAMURA, Yasuhiro FUJII, Michiyo KAMIYA, S ...
    2004 年 72 巻 6 号 p. 455-457
    発行日: 2004/06/05
    公開日: 2019/06/08
    ジャーナル フリー

    TiO2 thin film, which has high photocatalytic property, was fabricated from its precursor solution by spin-coating method. The solution was prepared by the recently developed advanced sol-gel method. This liquid process is based on the hydrolysis and polymerization of Ti alkoxide in mixed solvent of butanol and toluene. The obtained solution was transparent without precipitate and stable, and thus the metal oxide precursor solution was prepared. TG-DTA analysis of the powder dried in vacuum and XRD patterns of the annealed films showed that the crystalline anatase phase appeared at 300°C. This temperature is lower than that obtained from the conventional sol-gel method. From AFM imaging, the surface of TiO2 thin film coated on quartz or glass substrates appeared flat. The photocatalytic activity of TiO2 thin film prepared by advanced sol-gel method was higher than that prepared by conventional sol-gel method.

  • Junji INUKAI, Masatoshi SUGIMASA, Shueh-Lin YAU, Kingo ITAYA
    2004 年 72 巻 6 号 p. 458-461
    発行日: 2004/06/05
    公開日: 2019/06/08
    ジャーナル フリー

    Adlayer structures of S on Cu(100) and Cu(110) were investigated by using in situ scanning tunneling microscopy (STM) in alkaline solution. On Cu(100), the adsorbed S formed a structure, whereas a c(2 × 8) structure was found on Cu(110). Both structures were stable in the double-layer potential region. At anodic potentials, Cu2S was formed on both surfaces. On Cu(100), patches of islands with Cu2S(100) surfaces were observed. On Cu(110), the surface was highly roughened as a result of the formation of Cu2S.

  • Takuya SHIMADA, Isao KOMATSU, Takayuki HOMMA, Hiromi NAKAI, Tetsuya OS ...
    2004 年 72 巻 6 号 p. 462-465
    発行日: 2004/06/05
    公開日: 2019/06/08
    ジャーナル フリー

    The oxidation mechanism of TiCl3 as a reductant for an electroless deposition process was studied by ab initio molecular orbital method. The reaction process of TiCl3 proceeds with the substitution of Cl to OH. Net charge and spin density of the reactant, product, and intermediates were evaluated. It was suggested that the electron emission of TiCl3, which is originated by the oxidation of Ti(III) to Ti(IV), took place when Cl is replaced by OH to form Ti(OH)4. The catalytic activity of the metal surface, which is one of the most important factors for the electroless deposition process, was studied using a Pd4 cluster as a model surface. It was suggested that the Pd4 cluster enhanced the reaction of TiCl3 to emit the electron. The effect of solvation is also taken into account in terms of the dielectric field constant. It was indicated that the heat of oxidation reaction shifted to an exothermic reaction with decreasing dielectric constant, indicating that the reaction preferentially proceeds in the vicinity of solid/liquid interface. However, it was indicated that the reaction could proceed in the bulk solution, suggesting that appropriate stabilization such as formation of complex is required for the application of the TiCl3 to the electroless deposition process.

技術報文
  • Kazuhiro SHIGYO, Sonoko UMEMURA, Kazumasa KAWASE
    2004 年 72 巻 6 号 p. 466-470
    発行日: 2004/06/05
    公開日: 2019/06/08
    ジャーナル フリー

    The chemical etching behaviors of undoped GaAs (100) in tartaric acid (C4H6O6) and hydrogen peroxide (H2O2) aqueous solutions is investigated for the fabrication of nano-structures applied for opt-electronic and photonic devices. The role of the constituents of the etching solution (H2O2 and C4H6O6) is reported clearly. The etching rate of GaAs increases with increased concentration of H2O2, and the cross-sectional etching profile changes from a non-isotropic to an isotropic shape as the H2O2 concentration decreases. X-ray photoelectron spectroscopy studies clarify that the H2O2 oxidizes the GaAs surface, and C4H6O6 removes the oxide layers. Photoelectron peaks attributed to arsenic oxides are obtained from the surface of a GaAs specimen chemically etched in a C4H6O6 + H2O2 aqueous solution. It seems that successive oxidation and dissolution of GaAs are performed during chemical etching in C4H6O6 + H2O2, and gallium oxide may preferably dissolve into the solution.

 
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