IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
Volume 5, Issue 16
Displaying 1-7 of 7 articles from this issue
LETTER
  • Yong-Woo Kim, Beomseok Shin, Jin-Ku Kang
    2008 Volume 5 Issue 16 Pages 581-585
    Published: 2008
    Released on J-STAGE: August 25, 2008
    JOURNAL FREE ACCESS
    This letter presents a high-speed 8B/10B encoder design using a simplified coding table. The proposed encoder also includes a modified disparity control block. Logic simulation and synthesis have been done for the performance verification. After synthesized with a CMOS 0.18µm process, the proposed design shows the operating frequency of 343MHz with no latency. The synthesized chip area is 1886µm2 with 189 logic gates. The proposed 8B/10B encoder shows the overall performance improvement compared to previous approaches.
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  • Minsung Jeon, Yoshihiro Tomitsuka, Kazuya Maishigi, Hisashi Uchiyama, ...
    2008 Volume 5 Issue 16 Pages 586-591
    Published: 2008
    Released on J-STAGE: August 25, 2008
    JOURNAL FREE ACCESS
    We firstly investigated the effect of hydrogen radical treatment to fabricate metal nanoparticles as catalyst, which is used for synthesizing one dimensional nanostructure, from metal oxide film at low temperature as 200°C. The metal nanoparticles with spherical shape were successfully fabricated after hydrogen radical treatment. Their surface shapes were clearly changed with increasing the hydrogen radical treatment time at same temperature. In addition, silicon nanostructures after fabrication of metal nanoparticles were grown at varied temperatures. The ball- and wire-like silicon nanostructures at 200°C and 400°C were synthesized, respectively. Their structure depends strongly on the growth temperature.
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  • Takashi Yamamoto, Kenji Kurokawa, Katsusuke Tajima, Toshio Kurashima
    2008 Volume 5 Issue 16 Pages 592-596
    Published: 2008
    Released on J-STAGE: August 25, 2008
    JOURNAL FREE ACCESS
    This paper describes a supercontinuum (SC) generation in 1.0µm band using photonic crystal fibers. To generate the SC, we have utilized two photonic crystal fibers with length of 1km and 300m, and an optical band pass filter inserted between them. We have obtained a 10GHz, 1.0µ m band WDM pulse source with a large spectral bandwidth of 4.22THz. The SC can be applied to WDM pulse source for 1.0µm band large-capacity transmission and the obtained SC has the potential to realize terabit/s WDM signal pulse generation.
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  • Tsuyoshi Funaki, Akira Nishio, Tsunenobu Kimoto, Takashi Hikihara
    2008 Volume 5 Issue 16 Pages 597-602
    Published: 2008
    Released on J-STAGE: August 25, 2008
    JOURNAL FREE ACCESS
    This paper focuses on using high temperature operating capability of SiC power devices, which are packaged in power modules. A SiC Schottky barrier diode is mounted on an active metal brazed Si3N4 substrate as a heat resistive power module. The temperature dependency of electrical characteristics of the SiC device and thermal dynamics of the power module are modeled for numerical electro thermal analysis. The results of numerical analysis demonstrate high temperature operation of SiC device in the power module, which assumes less heat dissipation by simplified cooling system. The experimental results validate the numerical analysis results of the modeled SiC power module.
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  • Takuo Tanemura, Yoshiaki Nakano
    2008 Volume 5 Issue 16 Pages 603-609
    Published: 2008
    Released on J-STAGE: August 25, 2008
    JOURNAL FREE ACCESS
    We derive explicit design rules of optical phased-array planar 1 × N switch to achieve small insertion loss, large extinction ratio, and non-dispersive waveguide structure required for wavelength-independent broadband operation. The minimum number of phase shifters and slab lengths were studied as a function of N and the optimized array shape was derived to minimize the optical path length. We show that the length depends nonlinearly on N, and may become significantly shorter compared with that of a tree-structured switch under certain conditions.
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  • Hamed Aminzadeh, Reza Lotfi, Khalil Mafinezhad
    2008 Volume 5 Issue 16 Pages 610-616
    Published: 2008
    Released on J-STAGE: August 25, 2008
    JOURNAL FREE ACCESS
    Traditional design of low-dropout regulators offers the use of metal-insulator-metal (MIM) compensation capacitors to avoid instability in the absence of output capacitance with equivalent series resistance (ESR). In addition to area efficiency achieved by replacing these capacitors with MOS transistors, the location of implanted transfer function poles and zeros are adaptively varied according to the value of load current. This idea has been applied to stabilize a 1.2V, 100mA low-dropout regulator in an industrial 0.18µm CMOS n-well process. Using the proposed technique, the regulator meets stability with a small 100pF MOSFET output capacitor and no ESR.
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  • Siti B. Ahmad-Anas, Mohamad K. Abdullah, Makhfudzah Mokhtar, Stuart D. ...
    2008 Volume 5 Issue 16 Pages 617-623
    Published: 2008
    Released on J-STAGE: August 25, 2008
    JOURNAL FREE ACCESS
    We demonstrate a direct decoding scheme to eliminate multiple access interference in optical spectral-amplitude-coded, multiple access networks. By detecting only the non-overlapping spectrums, our scheme shows a better BER of eight orders of magnitude over the conventional complementary subtraction scheme, when 16 simultaneous channels with 10Gbps bit rate per channel are transmitted over a simulated 70km dispersion-compensated fiber span. Our direct decoding technique is also tolerant to chromatic dispersion, where the maximum achievable distance of 67km was obtained in a dispersion limited system with standard 16ps/nm.km dispersion of single mode fiber.
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