Although E
' defect center in silicate glass and crystalline quartz was discovered for an excellent dosimetry for ultra-high level radiation above 10
4 Gy (Wieser and Regulla, 1990), in this work, Ge center in reagent quartz and HOHC (hydronium ion combined with oxygen hole center) in silicon dioxide made from silicon tetraethoxide were found, respectively, to be useful dosimetries up to 2000 Gy and 6000 Gy in the middle level radiation. The use of other defect centers such as vacancy or valence alteration radicals of E
' (oxygen vacancy), POR (peroxyl radical) and NBOHC (non-bridging oxygen hole center), and besides, the centers due to Al or Ti impurities were, on the contrary, inadequate for the dosimetry in above ranges.
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