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113 巻, 11 号
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山田 明, 高橋 清1993 年 113 巻 11 号 p. 725-727
発行日: 1993/11/20
公開日: 2008/07/15
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現状と展望杉 道夫1993 年 113 巻 11 号 p. 728-735
発行日: 1993/11/20
公開日: 2008/07/15
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仁木 栄, 山田 昭政, 牧田 雄之助, W. S. C. Chang, H. H. Wieder1993 年 113 巻 11 号 p. 736-740
発行日: 1993/11/20
公開日: 2008/07/15
ジャーナル フリーProperties of two strained-layer InxGa1-xAs/GaAs superlattice (SL) structures grown on (100)-oriented GaAs substrates by molecular beam epitaxy have been investigated with emphasis on their electroabsorption (EA) characteristics. Sample 1, 125 periods of In0.19Ga0.81 As (25Å)/GaAs (25Å) SL showed a tilting of the band edge with respect to electric field which is similar as bulk materials-While, sample 2, 50 periods of In0.25Ga0.75As(50Å)/GaAs(50Å)SL exhibited a distinct blue shift at an electric field of 44kV/cm, and then redshifted with further increasing electric field like quantum confined Stark effect. A simple Kronig-Penny model is introduced to characterize such EA effects, and we attribute tentatively the EA effect observed in sample l to photon-assisted tunneling and that of sample 2 to Wannier Stark localization. Observation of distinct Wannier Stark localization effect suggests that elastically-strained SL layers have been grown despite the total thicknesses of strained-layers are well beyond the critical layer thickness limit.抄録全体を表示PDF形式でダウンロード (1062K) -
李 定植, 國吉 繁一, 工藤 一浩, 田中 國昭, 仁木 栄, 山田 昭政, 牧田 雄之助1993 年 113 巻 11 号 p. 741-748
発行日: 1993/11/20
公開日: 2008/07/15
ジャーナル フリーAn X-ray diffraction measurement has been used for investigating the structure of thin films such as multiple quantum wells (MQWs) and superlattices. Especially, an asymmetric reflection measurement is powerful for thin layer structures because the information of structures in lateral direction can be obtained.
In this paper, the symmetric and asymmetric X-ray diffraction measurements have been employed to evaluate the InAs/GaAs strained-1ayer structures grown on variously oriented GaAs substrates. We also propose the new model of asymmetric X-ray diffraction in MQW structures.
The comparison of the results obtained from several X-ray diffractometers (1, 2, and 5 crystal arrangements; involving sample crystal) demonstrate the necessity of the parallelized X-ray beam that has good monochromaticity for evaluation of thin layer structures.抄録全体を表示PDF形式でダウンロード (1527K) -
竹村 泰司, 小長井 誠1993 年 113 巻 11 号 p. 749-754
発行日: 1993/11/20
公開日: 2008/07/15
ジャーナル フリーStructure of ZnSe-ZnTe short-period superlattices prepared by atomic layer epitaxy was studied. X-ray diffraction and transmission electron microscopy measurements indicated that the sample formed a fine superlattice structure which had an abrupt interfaces. This paper reports the lattice strain and lattice vibration in the superlattice which were investigated by Raman scattering spectroscopy. It was found that the obtained superlattices were strained under free-standing configuration and that the phonon frequency was affected by the effect of short-periodicity for the structure with layers less than 4 monolayers. Lattice vibration in ZnSe-ZnTe superlattice was proposed, which was different from that in GaAs-AlAs superlattice.抄録全体を表示PDF形式でダウンロード (1229K) -
斉藤 和裕1993 年 113 巻 11 号 p. 755-761
発行日: 1993/11/20
公開日: 2008/07/15
ジャーナル フリーLangmuir-Blodgett (LB) method is known as a unique method for preparing organic thin films, which can control thickness of the films in molecular level, and many kinds of ultra thin films of functional molecules have been prepared using this method. In this paper, merocyanine dye, which shows a typical photoelectric effects, was used as film forming material and Schottky type cells of Al/merocyanine LB film/Ag structure were fabricated to investigate photoelectric properties of the cells. Mechanisms of photoelectric effects in the cells are discussed based on the experimental results and theories.抄録全体を表示PDF形式でダウンロード (1040K) -
メモリーおよびセンサの提案金子 双男, 新保 一成, 山下 建, 加藤 景三, 加藤 智, 小林 豊, 鈴木 勝, 小林 敏志1993 年 113 巻 11 号 p. 762-768
発行日: 1993/11/20
公開日: 2008/07/15
ジャーナル フリーNew ultrathin film devices, i. e. a memory and/or a sensor, are proposed using microscopic behavior of organic molecules, i. e. a polarization phenomenon of dipoles. The devices are fabricated from organic ultrathin films with sandwich electrodes, containing dipoles with various relaxation times, or dipoles that change with some stimulation : irradiations of the light, chemical treatments and so on. The polarizations of the dipoles in the devices are odulated by optional and multiple writing signal patterns, i. e. voltage-time patterns, during the decrease of a triangular thermal pulse, and the patterns are detected as depolarization currents during the increase of the pulse. The writing and the detecting signals are simulated for the memory device. Furthermore, the fundamental properties are examined for phosphatidic acid LB film devices and for spiropyran LB film devices.抄録全体を表示PDF形式でダウンロード (1088K) -
北村 俊明, 草開 稔, 前川 義治, 青笹 正夫1993 年 113 巻 11 号 p. 769-776
発行日: 1993/11/20
公開日: 2008/07/15
ジャーナル フリーA triode glow discharge system was used for the preparation of plasma-polymerized hexamethyldisilazane (PPHMDS) films. The growth rate, composition and dielectric breakdown strength of PPHMDS films were investigated.
The high growth rate of 740Å/min was obtained by applying an rf voltage (300V) to the substrate electrode. The concentration ratio of carbon to silicon atoms in PPHMDS films prepared without the rf voltage application was almost the same as that of the monomer. However, the ratio in the PPHMDS films prepared with the rf voltage application was smaller than that prepared without rf voltage application.
The breakdown strength of the PPHMDS films prepared with the rf voltage application was higher than that prepared without the rf voltage application and it was about 10MV/cm when the thickness was 1, 000Å.抄録全体を表示PDF形式でダウンロード (1180K) -
福田 篤志, 伊東 栄次, 岩本 光正1993 年 113 巻 11 号 p. 777-783
発行日: 1993/11/20
公開日: 2008/07/15
ジャーナル フリーWe studied the electrostatic phenomena occurring at the metal/polyimide (PI) LangmuirBlodgett (LB) film interface. The surface potential of PI LB films deposited on metal electrodes was measured with the Kelvin technique. It was found that an electric field on the order of 106V/cm was formed in PI LB films near metal/PI interface, due to the displacement of excess charges from metal electrodes. We then examined the photoresponse of the surface potential of PI LB films. The potential changed with photoirradiation, because photogenerated carriers were conveyed along the electric field established in PI LB films. Finally, we investigated the influence of the space charge layer on the electrical properties of metal/PI/metal elements.抄録全体を表示PDF形式でダウンロード (1316K) -
國吉 繁一, 近藤 且章, 工藤 一浩, 田中 國昭1993 年 113 巻 11 号 p. 785-790
発行日: 1993/11/20
公開日: 2008/07/15
ジャーナル フリーInelastic electron tunneling spectroscopy (IETS) is employed to investigate adsorption LangmuirBlodgett monolayers deposited on silicon substrate with a thin SiO2 film. IETS measurement is very sensitive and useful for characterization of ultra thin organic films. However, in the general IETS measurement, IETS contains unessential signal due to leakage current, contamination, etc. In this study, the tunnel junction on the same Si substrate is used as the reference in order to eliminate these difficulties. First, the effects of the reference were examined using imitative samples composed of three kinds of diodes and resistance. From these results, the use of reference in IETS mesurement is very useful to obtain the essential signal. Second, IETS of LB film of dodecyl tetracyanoquinodimethane (C12 TCNQ) at 20K were measured. It was clearly shown the effects of the reference tunnel junction such as a significant suppression of background level and extraction of fine structures corresponding to C12TCNQ vibration modes.抄録全体を表示PDF形式でダウンロード (793K) -
岡部 成光, 財満 英一, 河野 照哉1993 年 113 巻 11 号 p. 791-792
発行日: 1993/11/20
公開日: 2008/07/15
ジャーナル フリーPDF形式でダウンロード (678K)
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