IEEJ Transactions on Fundamentals and Materials
Online ISSN : 1347-5533
Print ISSN : 0385-4205
ISSN-L : 0385-4205
Volume 115, Issue 6
Displaying 1-11 of 11 articles from this issue
  • Akira Ohnishi, Takahiro Onoda, Shigeru Yamamoto, Syuuzi Sanbe, Yousuke ...
    1995 Volume 115 Issue 6 Pages 471-478
    Published: May 20, 1995
    Released on J-STAGE: July 15, 2008
    JOURNAL FREE ACCESS
    A cover glass and second surface mirror made of a new borosilicate glass (BDX) for scientific satellite are developed. The BDX consists of SiO2, Al2O3, BaO and Na2O. This glass has many features of efficient UV absorption, high transmittance and low alkali migration.
    Two types of cover glasses (AR and CC) based on BDX are present. The type AR is coated with antireflection layer on the front surface. The type CC is coated with conductive layer/antirefiection layer on the front surface. The second surface mirror (type CSSM), front surface in coated by conductive layer/antirefiection layer and back surface is coated by Ag/protection layer.
    This paper in describing the properties of BDX, two types of cover glasses and second surface mirror including results of evaluation by proton, electron, UV irradiation on the ground test and in space environment test with scientific satellite AKEBONO.
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  • Kazunari Shinbo, Keizo Kato, Futao Kaneko, Satoshi Kobayashi
    1995 Volume 115 Issue 6 Pages 479-484
    Published: May 20, 1995
    Released on J-STAGE: July 15, 2008
    JOURNAL FREE ACCESS
    The electric properties were investigated for phosphatidic acid (PA) LB films adsorbing cyanine dyes (NK-3) with sandwich electrodes. PA LB monolayers adsorbing the dyes and the monolayers of Cd salt without the dyes are deposited using subphases, containing various concentrations of the dyes and cotaining CdCl2 instead of the dyes, respectively. Conduction currents are measured at room temperature for the PA LB film devices. Increases in the conduction currents are observed in the LB films containing the dyes. Furthermore, the conduction currents remarkably increase using the Au upper electrode. The current (I) vs. voltage (V) properties nearly follow the Poole conduction, log(I)-V. Therefore, the conduction currents are very complicated and are thought to be due to composite mechanisms in the film and at the interface. TSC measurements are used to examine the dipolar polarizations in the PA LB films, in the temperature region between 150K and 300K. Remarkable increase of TSCs are observed above 260K for the devices containing the dyes. The TSCs are caused by the dipolar polarizations, and increase with the quantity of the dyes contained in the LB devices and/or aggregations of the dyes. The results are useful for applications of ultrathin film devices in the future.
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  • Takayuki Ooishi, Hiroyuki Hama, Manabu Yoshimura, Haruhisa Fujii, Koic ...
    1995 Volume 115 Issue 6 Pages 485-491
    Published: May 20, 1995
    Released on J-STAGE: July 15, 2008
    JOURNAL FREE ACCESS
    The authors studied the charging mechanisms of a particle on dielectric coated electrode at AC and DC electric fields. The partial discharges at the small gap between the particle and the dielectric were observed by a sensitive optical measurement system, and lift-off stresses were measured. The stresses of partial discharge initiation and lift-off increase with the gas pressure at AC stress. This suggested that the particle on the dielectric coated electrode was charged by the partial discharges. The lift-off stress had the minimum at the dielectric film thickness of around 80-90μm. This property was understood by combining the stress of partial discharge initiation and the net charge for the lift-off calculated under measured lift-off stress. In the short term test at DC stress, the stress of lift-off increases with the gas pressure as well as at AC stress. From the short term test and the long term one at DC voltage application, it is concluded that the partial discharge at the small gap between the particle and the dielectric is the mechanism charging the particle, though the light emission generated by the partial discharge was not detected by the optical measurement.
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  • Haruhisa Yamaguchi
    1995 Volume 115 Issue 6 Pages 492-498
    Published: May 20, 1995
    Released on J-STAGE: July 15, 2008
    JOURNAL FREE ACCESS
    In order to make good use of solar energy, it is important to analyse the illuminance distribution due to skylight under various condition, In this paper, under two sky condition, CIE standard overcast sky and uniform sky, the illuminance distribution due to skylight incident from sky through horizontal skylight Window onto interior surfaces of a solid With a shape of rectangular parallelepiped is analysed, As a result, a series of equations for Calculating direct illuminance at an arbitrary point on the interior surfaces and Iuminous flux incident directly on an arbitrary interior surface is proposed, and the ratio of luminous flux distributed on interior surfaces (the base, the wall) to total luminous flux incident inside through horizontal skylight window is graphed.
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  • Yuji Muramoto, Yukio Mizuno, Masayuki Nagao, Masamitsu Kosaki
    1995 Volume 115 Issue 6 Pages 499-504
    Published: May 20, 1995
    Released on J-STAGE: July 15, 2008
    JOURNAL FREE ACCESS
    This paper focuses on the effect of moisture on dielectric properties of polysdoxaneimide thin film. Relative humidity dependenences of dielectric constant, tanδ and DC conduction current were measured and AC loss mechanism was discussed.
    Dielectric constant of polysiloxaneimide film increased linearly with relative humidity in the frequency range from 50Hz to 100kHz. For instance, dielectric constant at 100kHz shows an increase of 30‰ with the change of relative humidity from 0‰ to 100‰ . This change may be attributed to the absorbed moisture in the film. Tanδ was also affected by the humidity especially at low frequency where tanδ decreased with frequency. The result was discussed in terms of the combination of dipole relaxation loss and conduction loss due to mobile carriers. Tanδ in high frequency region where tanδ increased with frequency is considered to be caused by dielectric loss due to dipole relaxatlon. Considering that both DC conduction current and tanδ in the low frequency increased with relative humidity, it is concluded that the conduction loss due to mobile carriers is dominant in this region. This conclusion is also supported by the estimation of the moisture effect on frequency dependence of the conduction loss based on the relative humidity dependence of DC conduction current.
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  • Mitsuaki Maeyama, Eiki Hotta
    1995 Volume 115 Issue 6 Pages 505-510
    Published: May 20, 1995
    Released on J-STAGE: July 15, 2008
    JOURNAL FREE ACCESS
    Analysis of ideal MHD equilibrium is one of basic numerical means for the magnetic design of device, or the MHD stability analysis of plasma. Especially, in demand is the equilibrium analysis of the condition not on a geometry of conducting shell, but on the current in external field control coil. In this paper, we propose a new numerical scheme for the analysis of stationary axisymmetric equilibrium using finite element method. The formulation of this scheme is done using the functional of assumed displacement hybrid model which makes it possible to use several tyges of elements, that is, lst order square element in (r, z) coordinate, square element parallel to the magnetic surface and 2-node semi-infiinite element. Features of plasma configuration such as tokamak, RFP, z-pinch and spheromak are given by specifying two magnetic surface functions P (ψ) and I (ψ) =rBt. Examples of application of this code to RFP device, TPE-2M, at Electrotechnical Laboratory are given.
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  • Hiroyuki Kon, Yasuo Suzuoki, Teruyoshi Mizutani, Hiroki Shigetsugu
    1995 Volume 115 Issue 6 Pages 511-520
    Published: May 20, 1995
    Released on J-STAGE: July 15, 2008
    JOURNAL FREE ACCESS
    We have been investigating the effects of antioxidant on the space-charge behavior in low-density polyethylene (LDPE) for cable insulation by utilizing laser-induced-pressure-pulse (LIPP) technique. In the present study, we studied the effects of antioxidant in PE in contact with a semiconducting layer. Results obtained are as follows. 1) In LDPE without antioxidant and with a semiconducting layer, negative and positive carrier injections from the semiconducting layer are enhanced, and injected carriers easily travel in the bulk. This results in the uniform space-charge formations in the PE bulk. 2) In LDPE with antioxidant and with a semiconducting layer, remarkable negative and positive homo space-charge formations in the vicinity of the iraterface are observed. These lead to the remarkable field distortion of about 60‰ of applied average field at the interface. The profile of the negative homo space charge is almost independent of the applied field and the sample thickness, i. e. its centroid is about 20μm deep from the interface. This is possibly due to carrier trapping. The profile of the positive homo space charge depends on the applied field and the sample thickness, i. e. it extends deeper in the bulk with increasing applied field and decreasing sample thickness. These remarkable homo space-charge formations in the vicinity of the interface arise from the coexistence of antioxidant and the semiconducting layer. 3) Space-charge behavior in XLPE with antioxidant and with a semiconducting layer is similar to that in LDPE with antioxidant. It suggests that antioxidant is more effective on space-charge behavior than cross-linking.
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  • Kazuyuki Tohyama, Tetsuroh Tokoro, Masayuki Nagao, Masamitsu Kosaki
    1995 Volume 115 Issue 6 Pages 521-526
    Published: May 20, 1995
    Released on J-STAGE: July 15, 2008
    JOURNAL FREE ACCESS
    We have already reported that tan δ of nonpolar polymeric films, such as low density polyethylene (LDPE), becomes larger in its value and has a large electric field dependence in the high temperature region above about 50°C. Assuming the conductivity due to mobile carrier σ x in high-field and high-temperature region has a small frequency dependence, we concluded that dielectric loss in this region is mainly dominated by carrier motion like DC conduction. To investigate this mechanism further, DC absorption current and electric field dependence of tan S were measured for electron beam irradiated crosslinked polyethylene (IR-XLPE) and LDPE.
    The electric field dependence of σx derived from tan δ in high temperature region elucidated following results: (1) The slope of the electric field dependence of σ x comes to coincide with that of σ DC at 80°C and above. (2) The electric field dependence of σ DC seems to fit better with Schottky model than with Poole-Frenkel model in high field region. Although the carrier generation seems to follow the Schottky model, the AC conduction mechanism is not straightforward.
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  • Masayuki Tanno, Toshihiko Ryuo, Mitsuo Nakazawa
    1995 Volume 115 Issue 6 Pages 527-533
    Published: May 20, 1995
    Released on J-STAGE: July 15, 2008
    JOURNAL FREE ACCESS
    A planar-type magnetostatic wave (MSW) device made from a YIG film having a weak frequency-temperature characteristics has a large possibility to be a counterpart of a YIG sphere device such as a microwave tunable oscillator. This paper aims at realizing such a temperature compensated YIG film. We searched film compositions both theoretically and experimentally. It was found that a Bi0.15Y2.85Fe4.34Ga0.66O12 film grown on a (111) GGG substrate with growth induced anisotropy constant (Kug) of 1.4×103J/m3, 4π Ms of 0.73×79.6kA/m, and ΔH of 1.5×79.6A/m at 9.2GHz shows an extremely small change of vertical resonance field versus temperature. That is within 3×79.6A/m between -33°C and 72°C at a constant frequency of 9.2GHz. An MSW resonator made from the Bi, Ga substituted YIG film also shows a high Q of 2, 000 at 3GHz and a Weak frequency change within 10MHz between 7°C and 74°C. The frequency drift versus temperature of the MSW resonator is less than that of a YIG shpere oscillator. Consequently, it is predicted that an MSW device made from the present material will replace the YIG sphere device.
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  • H. Gao, K. Uno, H. Kaneda, N. Yoshikawa, M. Sugahara
    1995 Volume 115 Issue 6 Pages 534-539
    Published: May 20, 1995
    Released on J-STAGE: July 15, 2008
    JOURNAL FREE ACCESS
    According to the observation of the resistivity measurements of the bulk specimens of La2-xSrxCuO4 (LSCO), the following phenomena have been found. (i) The resistivity, which is dependent on Sr-doping level (x), shows anomalously large decrease around the special doping levels x_??_1/4n(n_??_1, 2, 3, …) in the temperature range from 4.2 K up to mom temperature. (ii) The superconductivity appears at low temperature in the doping range1/42_??_x_??_ 1/4. In order to make clear the effect of the normal resistivity depression around the special Sr doping levels, we conducted a Hall measurement on the specimens of LSCO which were in the form of bulk and thin film, and found that the Hall mobility increases around the special doping levels mentioned above.
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  • Shinan Wang, Fumio Aida, Yasutaka Fujiwara
    1995 Volume 115 Issue 6 Pages 540-541
    Published: May 20, 1995
    Released on J-STAGE: July 15, 2008
    JOURNAL FREE ACCESS
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