The hydrogen barrier effect of SrRuO
3(SRO) top electrode in SrBi
2Ta
2O
9(SBT) ferroelectric capacitors was investigated. Both the SRO(270nm) and SBT(250nm) thin films were prepared by pulsed laser deposition. The remnant polarization of SRO/SBT/Pt capacitor was kept to be 8 μ C/cm
2 after 3%H
2/He treatment even at 400°C for 10min. Moreover, after annealing at 200°C for 10min in 3%H
2, the remnant polarization during 10
10 switching cycles was nearly constant. These results indicate that the SRO top electrode works as a hydrogen barrier. In case of Pt/SBT/Pt capacitor, x-ray diffraction peaks of SBT thin films disappeared after the H
2 treatment even at 200°C for 20 hours. On the other hard, deffraction peak intensities of both SRO and SBT thin films in SRO/SBT/Pt capacitor remained the same after H
2 treatment. The SRO top electrode is very attractive for highly integrated ferroelectrice nonvolatile memory applications.
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