VO
x precursor thin films were fabricated by metal-organic decomposition (MOD). Then, the films were fired with a temperature of 500-720°C, time of 5-20 min and pressure of 1.2-10 Pa in O
2 and the air (O
2: 21%). The composition of VO
x thin films, after the precursor films were fired at 650°C for 10 min, changed as V
2O
5 → V
3O
7 → V
6O
13 → VO
2 with decreasing the firing pressure in O
2. A phase transition (metal-insulator transition: MIT) was observed for the VO
x thin film containing VO
2 in
R-
T characteristic. However, the electrical properties were poor. On the other hand, VO
x thin film after the precursor films were fired at 650°C for 10 min under the pressure of 1.2 Pa in the air exhibited an abrupt transition, with a resistance change of 3 orders of magnitude, and a temperature coefficient of resistance (TCR) was 4.6 %/K. Furthermore, the VO
x film also exhibited an electrically triggered MIT in
I-
V characteristic and a switching operation with a threshold voltage of ∼6.0 V. These characteristics obtained by the VO
x thin film are applicable to bolometer detectors and switch devices.
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