This paper examines our approach of English oral reading through our new project called "HIT Education in 2016" we have just launched since this April, especially focusing on the class for students majoring in electronic and electrical engineering. In that class, the way of English oral reading is highlighted in order to inspire and brush up students’ ability. We are trying to improve students’ basic ability of English to be mastered.

In this paper, we discuss hands-on reflections including KPT-Why-Solution Retrospectives (KWS Retrospectives) for the purpose of growing students' problem identification skills and problem solving skills in student experiment Project Based Learning (PBL). The KWS Retrospectives is a framework for problem recurrence prevention and reflection that combines and builds on conventional version of Keep-Problem-Try (KPT) and Ask-Why.

This activity of KPT has the following four educational goals. (1) In reflections after implementing PBL, we have the students form an understanding of the current situation, including Keep (good points), Problem, and Try (challenges) through PBL. (2) In forming an understanding of the current situation, we have the students quantize those items in terms of the metrics of urgency, difficulty, effective, and impact, and have them visualize their weigh and priority. (3) In addition, we have the students experience the process of sharing problems and reaching consensus through a group discussion, and have the students confirm the suitability of the problem solving process for themselves. (4) After that, we have the students experience the problem solving process separately in another lecture or PBL, leading to continuous growth in problem solving skills.

As a result of the hands-on reflections, the students learned (1) through (3). The challenge for the future is (4) growing problem solving skills through continuous implementation.

This paper proposes an integral equation to describe the stochastic fluctuation of partial discharge (PD) occurrence under sinusoidal voltage stress based on a simple PD model. In the model, the stochastic behavior of PD fluctuation is assumed to arise from the fluctuation of PD delay time after the inception voltage and the fluctuation of residual voltage after PD occurred. For simplicity of calculation, the distribution of delay time is assumed to obey an exponential distribution, and the distribution of residual voltage is assumed to obey a normal distribution. Based on these assumptions, it is found that the proposed integral equation provides the basic characteristics such as the PD pulse distribution in applied voltage phase angle domain. The authors solved the equation with numerical method and showed several ϕ-n distribution patterns. The authors analyzed the relationship among ϕ-n distribution patterns and several discharge parameters such as the delay time constant, the partial discharge inception voltage, the mean residual voltages and the standard deviation of residual voltage, the applied voltage.

To meet increasing demands miniaturization and high performance of power equipment, it is necessary to develop new polymer insulating materials with high electrical insulation performance and high heat resistance. Engineering plastic such as Polyphenylene Sulfide (PPS) has been developed as one of the solution. However, detailed partial discharge characteristics and aging have not been clarified yet. In this paper, we investigated the partial discharge characteristics of PPS and PPS/calcium carbonate (CaCO₃) composite material under DC voltage application. In addition, the surface of PPS/CaCO₃ was whitened by applying the AC voltage for a certain period of time. The partial discharge characteristics of the whitened PPS/CaCO₃ composite material was investigated under DC voltage application.

NiO is a p-type semiconductor having a large band gap (> 3 eV). In this study, thin films containing Ni-O were deposited by the cathodic electrochemical deposition method, and characteristics change by heat treatment was investigated. An aqueous solution containing Ni(NO₃)₂ was used as a deposition solution. X-ray photoelectron spectroscopy showed that the sample before annealing was predominantly Ni(OH)₂. After heat treatment in air at temperatures higher than 300ºC, the NiO phase was observed by X-ray diffraction, and the p-type response was confirmed by the photoelectrochemical measurement. The band gap obtained from the light transmittance measurement was around 3.5eV.

A quasi-distributed constant line common-mode filter was improved to expand attenuation bandwidth up to around several tens MHz, which consisted of a Mn-Zn ferrite toroidal core, common-mode windings and 1-turn copper ground-line. The fabricated filter exhibited a 40 dB attenuation bandwidth of 100 kHz - 27 MHz, such the wideband attenuation was due to small ground-line inductance.

We have developed a capacitor charger for 1 kV, 55 mJ/pulse, 5 kpps pulsed power application, which is attainable to 361.8 J/s in average charge power. The charger based on the forward type with two switches consists of topology having the advantage of lower voltage stress, and fast response due to control by a field programmable gate array. The charger is able to accomplish 1.6 µs of a short delay time that mean from the turn-off the inhibit signal to start charging time. Simulation results were applied to the selection of switch devices of laboratory prototype charger of 1 kV, 1 MHz.

To the present, the ultraviolet radiation linear discharge (ULD) phenomenon was found in the sphere gap of the uniform electric field region. This phenomenon is the phenomenon which generates the linear discharge of the ultraviolet radiation region with the spark discharge. It became clear that ULD had the close relation for the phenomenon known until now as spark delay and irregular discharge phenomenon only.

In this report, by changing spherical electrode which polished the electrode surface from the viewpoint of electrode surface state of the gap by the sandpaper for the purpose of the elucidation of generating factor of ULD for the electrode in the high potential and low-potential side, the difference of the ULD phenomenon was examined.