The non-latch-up IGBT was developed by a Japanese researcher 25 years ago, and thereafter, further modifications have been introduced mainly by Japanese engineers involved in research on power semiconductor devices. The development of non-latch-up IGBT (1984), IEGT (1990), and FS-IGBT (1999) have been the three major milestones that have defined the focus of the research on IGBT development. The 1
st milestone was the development of IGBTs with characteristics better than those of Bipolar junction transistors. The 2
nd milestone was the removal of limitation of blocking voltage without increase of on-state voltage, resulting in achievement of the blocking voltage as high as that of a GTO. The 3
rd milestone resulted in the IGBT becoming the most widely used power semiconductor device. Then, in 2006, a device with electrical characteristics even with those of SiC and GaN devices was reported. This device could be considered the 4
th milestone. In this paper, I attempt to describe the spirit and passion which were shared by the 1
st generation people of the IGBT development.
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