IEEJ Transactions on Sensors and Micromachines
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
Volume 117, Issue 1
Displaying 1-11 of 11 articles from this issue
  • Masahisa Sugihara, Kazuyuki Minami, Masayoshi Esashi
    1997 Volume 117 Issue 1 Pages 3-9
    Published: December 20, 1996
    Released on J-STAGE: April 01, 2009
    JOURNAL FREE ACCESS
    We have developed micro assembly technique which uses polymer and conductive material deposited by laser CVD as adhesive. Following techniques were adopted to increase the deposition rate. Continuous wave (CW) ultraviolet (UV) laser was used. The substrate was cooled to condense the source gas on the surface. To avoid depositing on a quartz window of the chamber, N2 gas flow was given directly under the window.
    Maximum polymer deposition rate by the laser CVD system was about 10μm/min. The deposited polymer was used to bond a SMA coil actuator to a silicon-glass structure for an active catheter.
    Maximum deposition rate of conductive material by the laser CVD system was about 3μm/min. The resistivity of conductive material was very high, because carbon and oxygen were contained in them. Therefore the deposited conductive material could not be utilized for micro assembly with electrical connection.
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  • Seongho Kong, Kazuyuki Minami, Masayoshi Esashi
    1997 Volume 117 Issue 1 Pages 10-14
    Published: December 20, 1996
    Released on J-STAGE: April 01, 2009
    JOURNAL FREE ACCESS
    Reactive ion etching (RIE) systems using capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) sources with SF6 gas have been developed for deep silicon machining with high aspect ratio. The developed RIE systems demonstrated high etch rate (2.3μm/min) and high selectivity (1700) for a sputtered nickel mask in silicon etching. A large capacity turbo molecular pump (TMP) with a small etching chamber was used to realize a low pressure with a high flow rate of etching gas. A circulatory cooling apparatus was used for cooling a silicon wafer. Etch rate showed uniformity within 10% for the area of 50cm2. Using the RIE system, we succeeded to etch a 200μm thick silicon wafer vertically through the thickness with an aspect ratio greater than 10. The RIE can be applied to fabricate three-dimensional silicon microstructures.
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  • Kazuhito Nakamura
    1997 Volume 117 Issue 1 Pages 15-19
    Published: December 20, 1996
    Released on J-STAGE: April 01, 2009
    JOURNAL FREE ACCESS
    A precise drilling technology with cross section control for use on thin ceramic materials has been developed using Excimer laser photo-ablation process. An homogenous illumination optical system and projection system of high resolution optical elements are applied to a newly designed mass production system. Homogeneity of laser energy under±5% on the mask surface has been obtained by the illumination system, making a final hole array with a distribution of exit hole diameter of 3.5±0.7μm in one processing field of 1.2×1.2mm square area. If a crack occurs in the process because of high repetition rate or high energy from the laser, productivity declines. Designing a specimen holder and He-gas assist enabled cracks to be avolded even at high repetition rate of 200Hz.
    This paper describes hole array drilling technique with cross section control of ceramics by multi musk method, production system and an application.
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  • Yamato FUKUTA, Terunobu AKIYAMA, Hiroyuki FUJITA
    1997 Volume 117 Issue 1 Pages 20-26
    Published: December 20, 1996
    Released on J-STAGE: April 01, 2009
    JOURNAL FREE ACCESS
    This paper presents a new reshaping technology which is suitable to realize real three dimensional silicon microstructures. In this process, the elastically deformed polysilicon structure is annealed by Joule heating generated by the current passing through the structure. Plastic deformation occurs resulting in permanent three dimensional shapes. The application of this basic process to different polysilicon structures is successfully performed. Some quantitative characteristics of the annealing effects are also investigated by means of structure deformation measurements.
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  • Shigeo Nakamura, Yousuke Nakamura, Manabu Ataka, Hiroyuki Fujita
    1997 Volume 117 Issue 1 Pages 27-32
    Published: December 20, 1996
    Released on J-STAGE: April 01, 2009
    JOURNAL FREE ACCESS
    To realize simple and powerful micro actuators, we have developed a new patterning method of TiNi shape memory alloy (SMA) thin films. This method supplies us attractive SMA micro structures from the viewpoint of aspect ratio. In the fabrication, we applied a lift-off process with a thick polymide mold layer and patterned a high aspect ratio SMA structure. The reason why we apply the lift-off process is that the structure's inner stress is lower than that obtained by wet or dry etching processes. By using this method, we have patterned structures of 20μm in width and 10μm in height. The aspect ratio of this structure is 0.5. The patterning accuracy is about 4μm. This process is useful to realize SMA micro actuators of TiNi thin films.
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  • Formation of micro spiral electrode
    Yutaka YAMAGATA, Shin-ya MORITA, Toshiki NIINO, Akio YAMAMOTO, Toshiro ...
    1997 Volume 117 Issue 1 Pages 33-38
    Published: December 20, 1996
    Released on J-STAGE: April 01, 2009
    JOURNAL FREE ACCESS
    A new fabrication method for electrostatic actuators is proposed. This method uses precision cutting technique to fabricate minute grooves which will be filled up with electro-plated metal layer to from fine three phase electrodes. Two types of sample electrodes with 40 micrometer pitch are fabricated on the surface of cylinders of 10mm diameter polyimide. One of the fabricated electrode was able to drive insulating fluid by applying pulse voltages. Though there were some defects on those electrodes, the breakdown voltage was as high as 1000V, which shows the potential ability of this fabrication method.
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  • Keiichi Yanagisawa, Hiroki Kuwano, Satoko Nakano
    1997 Volume 117 Issue 1 Pages 39-44
    Published: December 20, 1996
    Released on J-STAGE: April 01, 2009
    JOURNAL FREE ACCESS
    A high-aspect-ratio and precise patterning of thick polyimide film has been achieved using a 50-μm-thick polyimide film masked by 0.1-μm-thick Ta film. The film was etched by a low-energy N2 ion beam with a single-grid Kaufman-type ion source. The selective ratio of the polyimide film vs. the Ta film reached more than 600. The wall angle of the polyimide pattern was about 2°. Etching rate experiments and XPS, FTIR, AFM analysis suggest that N2 ion beam etching is a reactive ion etching.
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  • Masayuki Nakao, Yotaro Hatamura
    1997 Volume 117 Issue 1 Pages 45-54
    Published: December 20, 1996
    Released on J-STAGE: April 01, 2009
    JOURNAL FREE ACCESS
    To fabricate micro machines, the authors designed, constructed, and evaluated a tabletop, integrated factory called "nano manufacturing world (NMW)". In NMW, we accommodates a compact layout where fabricating/handling machines are concentrated around a workpiece, and a tele-operation system between the processing site and the operating site, which involves dynamic, realtime, high-resolving and 3D images using scanning electron microscopes. We developed various working processes in NMW: e.g. fast atom beam etching, micro assembling using a concentrated motion manipulator. Through the demonstration of fabricating some 3-dimensional micro structures, we evaluate that NMW functions effectively as intended, and will become a solution for micro manufacturing system.
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  • Shinsuke Hannoe
    1997 Volume 117 Issue 1 Pages 55-56
    Published: December 20, 1996
    Released on J-STAGE: April 01, 2009
    JOURNAL FREE ACCESS
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  • Takahiro Ito, Hiroshi Koshimizu, Shinsuke Matsui, Renshi Sawada
    1997 Volume 117 Issue 1 Pages 57-58
    Published: December 20, 1996
    Released on J-STAGE: April 01, 2009
    JOURNAL FREE ACCESS
    Download PDF (818K)
  • Takayuki Fujita, Takuya Mizuno, Kazusuke Maenaka, Muneo Maeda
    1997 Volume 117 Issue 1 Pages 59-60
    Published: December 20, 1996
    Released on J-STAGE: April 01, 2009
    JOURNAL FREE ACCESS
    Download PDF (966K)
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