The rutile-type TiO
2 thin film doped with pentavalent additives such as Nb or Ta, prepared by a multi-target sputtering system, exhibited fairly good NO
2 sensing characteristics over the range from 0 to 300ppm at 600°C. According to the Arrhenius plots between conductivity and reciprocal temperature, it seems that the doped Nb or Ta formed some impurity energy level in the forbidden band of TiO
2, while V-doped film showed different conducting mechanism. In addition, high-temperature durability in oxydative and reductive exhaust gases was confirmed at 800°C.
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