BaTi
0.91(Hf
0.5, Zr
0.5)
0.09O
3 thin films were synthesized by pulsed laser deposition method using fourth harmonic generated Nd
3+:YAG laser beam. The ferroelectric properties of BaTi
0.91(Hf
0.5, Zr
0.5)
0.09O
3 thin films were investigated by electrical measurements. Using Debye model, the frequency dependence of dielectric constant for BaTi
0.91(Hf
0.5, Zr
0.5)
0.09O
3 thin films was analyzed. The dielectric constant of multi-layerd film which was grown by Ba
xTi
0.91(Hf
0.5, Zr
0.5)
0.09O
3 (
x=1.0, 3.0) targets decreased significantly with increasing frequency. On the other hand, the BaTi
0.91(Hf
0.5, Zr
0.5)
0.09O
3 thin film grown by Ba
xTi
0.91(Hf
0.5, Zr
0.5)
0.09O
3 (
x=1.5) target decreased weakly with increasing frequency. The dielectric constant, remanent polarization and coercive electric field were estimated to be 118 at 1kHz, 8.7μC/cm
2 and 127kV/cm, respectively.
BaTi
0.91(Hf
0.5, Zr
0.5)
0.09O
3 thin film on Pt/SiO
2/Si(100) substrate showed high Curie temperature than that of BaTi
0.91(Hf
0.5, Zr
0.5)
0.09O
3 polycrystal. The RHEED intensity oscillation was observed during the deposition of SrTiO
3 buffer layer and BaTi
0.91(Hf
0.5, Zr
0.5)
0.09O
3 thin film on Nb:SrTiO
3(100) substrate. The
D-E hysteresis loop of BaTi
0.91(Hf
0.5, Zr
0.5)
0.09O
3 thin film on Nb:SrTiO
3(111) substrate was observed. The remanent polarization and coercive electric field were estimated to be 3.1μC/cm
2 and 3.6kV/cm, respectively. Polarization fatigue measurements were carried out up to 10
12 cycles.
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