This paper reports the development of a new double-side plasma-enhanced plasma chemical vapor deposition (PECVD) system for amorphous SiC. The PECVD system has cathode-coupling and hot wall type configuration. A wafer, which works as a cathode, is supported at the center of a quartz tube, and carbon anodes are placed at both sides of the wafer. Using tetramethylsilane (Si(CH
3)
4) mixed with H
2 and Ar, amorphous SiC was deposited on both sides of the wafer simultaneously, and little wafer bending was observed even if the film has a compressive stress of several hundred MPa. Thus, the developed double-side PECVD system is useful to minimize wafer bending, which is often a problem for devices and fabrication processes. The fundamental properties (e.g. stress and Si/C ratio) of deposited films were investigated under different deposition conditions (e.g. gas flow rates and self-bias voltage).
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