電気学会論文誌E(センサ・マイクロマシン部門誌)
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
132 巻, 8 号
選択された号の論文の9件中1~9を表示しています
特集:MEMS パッケージングと微細加工技術
特集論文
  • Jian Lu, Hideki Takagi, Yuta Nakano, Ryutaro Maeda
    2012 年 132 巻 8 号 p. 230-234
    発行日: 2012/08/01
    公開日: 2012/08/01
    ジャーナル フリー
    The large-scale and low-cost integration of various MEMS devices with ICs is significantly important for MEMS ubiquitous applications and commercialization. This paper presents our flexible and size-free MEMS-IC integration approach by a two-step process: MEMS and IC known-good-dies (KGD) are temporarily bonded onto carrier wafer first, and then those KGDs were transferred from carrier wafer to target IC wafer or interposer wafer by permanent bonding. In this work, surface self-assembled monolayer (SAM) fine pattern was introduced by a simple and low-cost lift-off process to define the binding-sites, which was demonstrated effective for rapid (in milliseconds) and high-accurate (<1µm) self-alignment of KGDs onto carrier wafer for temporary bonding. Plasma activated Au-Au bumpless bonding was applied for low-temperature permanent bonding (≤200°C) of KGDs onto target wafer with less damage to MEMS and IC devices.
  • Hidetoshi Shinohara, Takaharu Tashiro, Takafumi Ookawa, Hiromi Nishiha ...
    2012 年 132 巻 8 号 p. 235-239
    発行日: 2012/08/01
    公開日: 2012/08/01
    ジャーナル フリー
    This paper demonstrated a high-throughput fabrication process of resin mold and nanostructures for high-brightness light-emitting diodes (LED). The fabrication process includes roll-to-roll (RtR) UV imprinting for resin mold fabrication and perpendicular UV imprinting on wafers. The measurement results of pattern sizes in UV imprinted sample indicate that the resin mold was uniform enough to use for subsequent UV imprinting, and highly uniform UV imprinting was achieved by means of developed high-throughput UV imprinting equipment. Thickness of the residual layer was highly uniform and repeatable. This fabrication process is expected to be applied to fabricate nanostructures for actual high-brightness LEDs.
  • 藤吉 基弘, 野々村 裕, 千田 英美
    2012 年 132 巻 8 号 p. 240-245
    発行日: 2012/08/01
    公開日: 2012/08/01
    ジャーナル フリー
    A high-resolution leak-testing method named HR (High-Resolution) Integration Technique has been developed for MEMS (Micro Electro Mechanical Systems) sensors such as a vibrating angular-rate sensor housed in a vacuum package. Procedures of the method to obtain high leak-rate resolution were as follows. A package filled with helium gas was kept in a small accumulation chamber to accumulate helium gas leaking from the package. After the accumulation, the accumulated helium gas was introduced into a mass spectrometer in a short period of time, and the flux of the helium gas was measured by the mass spectrometer as a transient phenomenon. The leak-rate of the package was calculated from the detected transient waveform of the mass spectrometer and the accumulation time of the helium gas in the accumulation chamber. Because the density of the helium gas in the vacuum chamber increased and the accumulated helium gas was measured in a very short period of time with the mass spectrometer, the peak strength of the transient waveform became high and the signal to noise ratio was much improved.
    The detectable leak-rate resolution of the technique reached 1×10-15 (Pa·m3/s). This resolution is 103 times superior to that of the conventional helium vacuum integration method. The accuracy of the measuring system was verified with a standard helium gas leak source. The results were well matched between theoretical calculation based on the leak-rate of the source and the experimental results within only 2% error.
  • 毛利 護, 江刺 正喜, 田中 秀治
    2012 年 132 巻 8 号 p. 246-253
    発行日: 2012/08/01
    公開日: 2012/08/01
    ジャーナル フリー
    This paper describes a versatile and reliable wafer-level hermetic packaging technology using an anodically-bondable low temperature co-fired ceramic (LTCC) wafer, in which multi-layer electrical feedthroughs can be embedded. The LTCC wafer allows many kinds of micro electro mechanical systems (MEMS) to be more flexibly designed and more easily packaged. The hermeticity of vacuum-sealed cavities was confirmed after 3000 cycles of thermal shock (−40°C×30min/+125°C×30min) by diaphragm method. To practically apply the LTCC wafer to a variety of MEMS, the electrical connection between MEMS on a Si wafer and feedthroughs in the LTCC should be established by a simple and reliable method. We have developed a new electrical connection methods; The electrical connection is established by porous Au bumps, which are a part of Au vias exposed in wet-etched cavities on the LTCC wafer. 100% yield of both electrical connection and hermetic sealing was demonstrated. A thermal shock test up to 3000 cycles confirmed the reliability of this packaging technology.
 
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