IEEJ Transactions on Sensors and Micromachines
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
Search
Advanced search
OR
Browse
Search
Volume 134, Issue 6
Displaying 1-13 of 13 articles from this issue
Show all abstracts
    • |<
    • <
    • 1
    • >
    • >|
Special Issue on “The Awarded Papers of The 30th Sensor Symposium”
Preface
Special Issue Paper
  • Development of Temperature-Compensated Catheter Flow Sensor for Measuring Reciprocating Air Flows in Bronchial Pathways
    Takuya Matsuyama, Yudai Yamazaki, Miyoko Matsushima, Tsutomu Kawabe, M ...
    2014 Volume 134 Issue 6 Pages 126-131
    Published: 2014
    Released on J-STAGE: June 01, 2014
    DOIhttps://doi.org/10.1541/ieejsmas.134.126
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    We introduced groove structures in between the flow- and temperature-sensors to avoid the heat flow to the temperature sensor from the heater used as the flow sensing. The grooves were produced by oxygen plasma etching, and thermal isolation effect by those was confirmed by an infrared thermography. The relationships between the flow rate and the flow sensor output with and without temperature compensation were evaluated. We finally confirmed that the variations of the flow sensor output by the change of the fluid temperature were successfully compensated by the temperature sensor.
    View full abstract
    Download PDF (3145K)
  • Load Vector Sensors using Strain Sensitive Cr-N Thin Films and Their Application
    Eiji Niwa, Kiwamu Shirakawa, Shigeaki Shingyochi, Sibei Xiong, Kenji N ...
    2014 Volume 134 Issue 6 Pages 132-139
    Published: 2014
    Released on J-STAGE: June 01, 2014
    DOIhttps://doi.org/10.1541/ieejsmas.134.132
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    A Cr-N thin film shows a gauge factor of about 16 and a temperature coefficient of resistivity (TCR) of about zero, which is expected as a new strain gauge material in the next generation. In this paper, the fabrication and characterization of a single module system of the load vector sensor using the Cr-N strain sensitive thin films, which can be applied for a sole sensor, are reported.
    View full abstract
    Download PDF (1491K)
  • Micro Inertial Driving Actuator with Built-in Position Sensor
    Kaoru Matsuki, Masaya Takahashi, Tetsuya Morishima
    2014 Volume 134 Issue 6 Pages 140-145
    Published: 2014
    Released on J-STAGE: June 01, 2014
    DOIhttps://doi.org/10.1541/ieejsmas.134.140
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    The micro inertial drive actuator, which can move two sliders independently, at 2.5 mm in width, 2 mm in height, and 20 mm in length was made as an experiment, and the basic characteristic was evaluated. As a result, we confirmed the movement speed of about 35 mm/s (drive frequency of 16 kHz) in the applied voltage of 80 V. In addition, we indicated that the position detection of the slider by a built-in sensor was possible, and achieved the position accuracy of ± 20 µm by using the control system with the build-in sensor.
    View full abstract
    Download PDF (982K)
  • Fabrication of Pierce-Type Nanocrystalline Si Electron-Emitter Array for Massively Parallel Electron Beam Lithography
    Hitoshi Nishino, Shinya Yoshida, Akira Kojima, Nokatsu Ikegami, Shuji ...
    2014 Volume 134 Issue 6 Pages 146-153
    Published: 2014
    Released on J-STAGE: June 01, 2014
    DOIhttps://doi.org/10.1541/ieejsmas.134.146
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    This paper reports on the fundamental process development of a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scaled integrated circuit (LSI). The emitter array consists of 100×100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operation voltages. Isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate for independent control of each emitter using the LSI. The integration process of the emitter array, the LSI and an extraction electrode plate was also developed based on Au-In and polymer bonding technologies.
    View full abstract
    Download PDF (2143K)
  • Pyro/piezo-electric Energy Converter based on Ferroelectric Material Combined with Thermo-mechanical Switch
    Takuya Saito, Yusuke Kawai, Takahito Ono
    2014 Volume 134 Issue 6 Pages 154-158
    Published: 2014
    Released on J-STAGE: June 01, 2014
    DOIhttps://doi.org/10.1541/ieejsmas.134.154
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    A novel pyro/piezo-electric energy converter, which is based on pyroelectric and piezoelectric energy conversion caused by periodic temperature and pressure change of a ferroelectric material, is developed. A bulk lead-zirconate-titanate (PZT) ceramic is attached on a bimetal disk. This bimetal disk is placed between hot and cold sources, which causes reciprocatory motion between the hot and cold sources. The temperature of the PZT ceramic is periodically changed due to the heat transfer, which produces pyroelectric current. At the moment of the forward and reverse buckling, piezoelectric current due to deformation of PZT ceramic is also caused. Maximum output power of 2.1 nW is obtained with the reciprocation frequency of 1.6 Hz when temperature difference is 258°C. This converter can be driven at hot source temperature higher than Curie point of PZT ∼330°C.
    View full abstract
    Download PDF (804K)
  • Review of Low-temperature Bonding Technologies and Their Application in Optoelectronic Devices
    Eiji Higurashi, Tadatomo Suga
    2014 Volume 134 Issue 6 Pages 159-165
    Published: 2014
    Released on J-STAGE: June 01, 2014
    DOIhttps://doi.org/10.1541/ieejsmas.134.159
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    Low-temperature bonding is an important fabrication technique for advanced microelectronic, MEMS (Micro electro mechanical systems) and optoelectronic devices. Recently, many low-temperature bonding methods such as surface activated bonding have been studied to create unique device structures for a wide range of photonics applications. This paper focuses on low temperature bonding technologies and reviews the state-of-the-art applications in optoelectronic devices.
    View full abstract
    Download PDF (2221K)
Special Issue Letter
  • Fabrication of Silicon Nanowire Probe with Magnet for Magnetic Resonance Force Microscopy
    Yong-Jun Seo, Masaya Toda, Yusuke Kawai, Takahito Ono
    2014 Volume 134 Issue 6 Pages 166-167
    Published: 2014
    Released on J-STAGE: June 01, 2014
    DOIhttps://doi.org/10.1541/ieejsmas.134.166
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    Silicon nanowires have attracted considerable attention due to their excellent mechanical and electrical properties and widely investigated for various applications. One of the exciting applications is magnetic resonance force microscopy (MRFM), which requires a high sensitive probe for three-dimensional imaging of spin densities. In this study, we have fabricated a 160 nm-wide and 52 µm-long Si nanowire probe with a Si mirror and Ni magnet from a silicon-on-insulator wafer. The nanowire is suitable structure as the probe for a detection of MRFM. The probe shows a resonance frequency of 8.007 kHz and a Q factor of approximately 5000. Two-dimensional force mapping based on electron spin resonance has been demonstrated using the fabricated nanowire probe.
    View full abstract
    Download PDF (967K)
 
 
    • |<
    • <
    • 1
    • >
    • >|
feedback
 Top