電気学会論文誌E(センサ・マイクロマシン部門誌)
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
135 巻, 3 号
選択された号の論文の13件中1~13を表示しています
特集:センサ・マイクロマシン英文特集号
巻頭言
特集論文
  • Koji Sonoda, Toshikazu Onishi, Keidai Minami, Kensuke Kanda, Takayuki ...
    2015 年 135 巻 3 号 p. 91-97
    発行日: 2015年
    公開日: 2015/03/01
    ジャーナル フリー
    This paper presents an electrostatic vibration energy harvester with a bipolar-charged electret for high output power and for low electrostatic force. In conventional electrostatic energy harvesters, electrets are charged by monopolar charge (mainly by negative) with a high potential for large power harvesting. We propose a bipolar charging method in order to form an electret, which not only has negative charge but also positive charge. The electrostatic energy harvester, with a size of 13×12×1.2 mm3, was fabricated and charged by a -250-V monopolar potential and by a ±250-V bipolar potential. The maximum output power of the monopolar- and bipolar-charged harvester is 3.1 µW and 9.8 µW, respectively with an applied acceleration of 7 g at 352 Hz with a 0.9-MΩ load resistance. The output power is 9 µW at 1.4 g and the maximum effectiveness against the velocity-damped resonant-generator (VDRG) limit is 2.5%. By using the bipolar-charged electret, the high output power obtained from the high charging potential was compared to a conventional harvester charged by the monopolar method. Further, using the finite element method (FEM) analysis, we determined that the electrostatic force that prevents harvesting mass movement is significantly reduced on the bipolar-charged electret. The electrostatic forces under static conditions along the vertical and horizontal directions obtained through the FEM analysis were reduced to 15% and 20%, respectively, from those of the monopolar-charged electret.
  • Yusuke Kawai, Kyosuke Kotani, Chuan-Yu Shao, Takahito Ono
    2015 年 135 巻 3 号 p. 98-102
    発行日: 2015年
    公開日: 2015/03/01
    ジャーナル フリー
    A micro-assembly technique for microstructures using a silicon clip mechanism is developed for a time-of-flight scanning force microscope (TOF-SFM) probe with an electrostatically driven actuator. Microsprings formed by deep reactive-ion etching are used for the clip micromechanism. Cantilever-shaped microelements for the TOF-SFM are handled by a manipulator, and the microgap between the microspring and opposite wall is expanded by pulling the microspring using a microneedle. Then, the microelement is inserted into the micromechanism, and is clipped by releasing the microspring. After assembly, all microelements are fixed with a conductive glue. Electrostatic actuation of the cantilevered microelement is demonstrated. This technique is advantageous in the fabrication of complex three-dimensional microstructures.
  • Jun-ichiro Yuji, Shota Shiraki
    2015 年 135 巻 3 号 p. 103-107
    発行日: 2015年
    公開日: 2015/03/01
    ジャーナル フリー
    This paper describes a magnetic tactile sensor with Indium antimonide (InSb) Hall elements that enables multifunctional tactile sensing devices to detect normal contact forces and temperature. InSb Hall elements are generally used as magnetic sensors. The proposed sensor consists of two InSb Hall elements and a magnet that are embedded in silicone rubber, which functions as artificial skin. Here, the normal contact force is detected by the variation in distance between the Hall elements and the magnet. The temperature characteristics of the InSb Hall elements depend on the bias circuit to generate the Hall voltage. Two output Hall voltages driven by two kinds of bias circuits are measured in the normal contact force range from 0 to 90 N, and for a temperature range of 0 to 50°C. The inverse response surfaces that are used to identify the normal contact force and temperature are formulated using experimental results. The results obtained show that it is possible to detect normal contact force and temperature by obtaining two kinds of Hall voltages.
  • Sayuri Yoshioka, Takashi Ikehata, Takashi Terashige, Kazuo Okano
    2015 年 135 巻 3 号 p. 108-111
    発行日: 2015年
    公開日: 2015/03/01
    ジャーナル フリー
    Two types of sensing systems for ion balance control, based on potential measurement and current measurement, were proposed and investigated. MOSFETs were used in both types of systems as key devices. The detection limits and response times of both systems were experimentally compared. The potential measurement type of system is superior in regard to the detection limit, and the current measurement type of system is superior in regard to the response time. The type of system should be appropriately chosen depending on the semiconductor manufacturing objective.
特集研究開発レター
部門記事
 
feedback
Top