映像情報メディア学会誌
Online ISSN : 1881-6908
Print ISSN : 1342-6907
ISSN-L : 1342-6907
64 巻, 9 号
選択された号の論文の23件中1~23を表示しています
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小特集論文
  • 三鴨 道弘, Marcos Slomp, 玉木 徹, 金田 和文
    2010 年 64 巻 9 号 p. 1372-1378
    発行日: 2010/09/01
    公開日: 2010/12/01
    ジャーナル フリー
    Most tone reproduction operators focus on luminance compression, ignoring chromatic assets. The humanvisual system, however, alters color perception according to the overall level of luminosity. This paper proposes an extensionfor existing operators to simulate chromatic changes under mesopic vision. In such conditions, red responses tend to fadefaster than the remaining stimuli, producing a blue-shift phenomenon known as the Purkinje E ect. Starting with a highdynamic range image, the proposed method proceeds by separating luminance and chrominance components. Luminancecompression is performed by means of any already existing operator, though in this paper, for convenience, the photographicoperator was employed. Chromatic changes are handled in a decoupled fashion according to overall average luminance and byfollowing the observations of previous psychophysical experiments. Finally, compressed luminance and adjusted chrominanceare combined together, providing a displayable, low-dynamic range image. The technique has a low fingerprint thus beingsuitable for interactive rendering.
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論文
  • 三俣 千春, 佐久間 昭正, 深道 和明
    2010 年 64 巻 9 号 p. 1389-1394
    発行日: 2010/09/01
    公開日: 2010/12/01
    ジャーナル フリー
    For the material design of antiferromagnetic layer enabling to reduce the read gap length of magnetic recording heads, the exchange bias between the ferromagnetic (FM) and antiferromagnetic (AFM) bilayer was investigated within the framework of the classical Heisenberg model. The dependence of the exchange bias on the AFM layer thickness was also calculated using the Landau-Lifshitz-Gilbert equation. The triple-Q (3Q), T1, and AF-I spin structures are obtained in the disordered γ-phase, ordered L12-, and L10-type lattices, respectively. The exchange bias is caused by the formation of the interfacial domain wall in the AFM layer, and the critical thickness dc of the AFM layer is dominated by the varied spin structures. Consequently, the relation of the critical thickness can be represented as √3dc3Q = √2dcT1 = dcAF-I.
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