All issues
Predecessor
23.60
Displaying 1-11 of 11 articles from this issue
- |<
- <
- 1
- >
- >|
-
Article type: Cover
Pages Cover1-
Published: October 21, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (15K) -
Article type: Index
Pages Toc1-
Published: October 21, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (47K) -
Fumihiko AndohArticle type: Article
Session ID: IPU99-81/IDY99-241
Published: October 21, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSThe origin and the development of the CMOS image sensor in a wide sense are described. Furthermore, to indicate one of new directions of the CMOS image sensor, the operation and the characteristics of a Digital Image Sensor which converts analog signals to 8-bit digital signals within each pixel and can operate under a standard TV system providing 8-bit digital output are explained.View full abstractDownload PDF (1123K) -
Isao Takayanagi, Jun-ici Nakamura, Hisayoshi Yurimoto, Takuya Kunihiro ...Article type: Article
Session ID: IPU99-82/IDY99-242
Published: October 21, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSA stacked CMOS active pixel image sensor has been developed for detecting charge particles. Wide dynamic range of 80 dB and good linearity have been demonstrated with a charge particle imaging system which incorporates a secondary ion mass spectrometer(SIMS). noise measurement results suggest that dynamic range exceeding 100 dB can be obtained if the reset noise is suppressed by utilizing the nondestructive readout (NDRO) capability of the CMOS APS.View full abstractDownload PDF (938K) -
Y. Ohkawa, K. Miyakawa, S. Suzuki, K. Shidara, K. Tanioka, K. Ogusu, A ...Article type: Article
Session ID: IPU99-83/IDY99-243
Published: October 21, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSIn order to reduce distortion caused by lowering the applied target voltage to adjust the sensitivity of the New Super-HARP Image Sensor, we propose a new type of target structure, in which the dark current in its non-scan area is suitably increased. We manufactured targets that were doped with Te in their non-scan areas and measured the time required for the distortion to disappear. Te-doped layers in these targets had different thicknesses and the positions were also varied. As a result, we confirmed that it takes much less time with a Te-doped target than with a conventional target, and were able to achieve a suitable Te-doping condition without deteriorating other properties.View full abstractDownload PDF (1035K) -
Susumu Mimura, Kazuaki Sawada, Katsuhiko Tomita, Tsuyoshi Nakanishi, H ...Article type: Article
Session ID: IPU99-84/IDY99-244
Published: October 21, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe propose and demonstrate a novel pH imaging sensor based on the CCD(Charge Coupled Device) technology. This device consists of pH sensing parts, which sense pH value and transform a pH value to electric charges, and conventional CCD parts, which transfer the electric charges to read out circuit. A thin Si_3N_4 film which acts as the hydrogen ion-sensitive membrane was used in the pH sensing film. The pH sensing parts use new pH sensing principle. The prototype devices were fabricated. The output signal from the imaging sensor was lineally changed from pH0 to 14, and successfully observed a pH image on a black & white TV monitor.View full abstractDownload PDF (1010K) -
Masakazu Matsuura, Yoshihiro Hayakawa, Kiyoshi Fujii, Fumiaki Sano, Ma ...Article type: Article
Session ID: IPU99-85/IDY99-245
Published: October 21, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESS1200-dpi, 4micronmeter-pitch CCD image sensors (TCD2901D/2903D) were developed. The decrease of sensitivity due to the reduction of pixel size is overcome by increasing the voltage gain of the on-chip amplifier, while reducing dark current and suppressing random noise of the on-chip amplifier. For high-resolution CCD image sensors, it is effective to reduce pixel pitch to attain low cost since the reduction of the pixel pitch enables chip area shrinkage and package size reduction. In this report, it is further demonstrated that 4micronmeter-pitch CCD image sensors can attain comparable characteristics with 7 micronmeter-pitch ones. Therefore we believe that 4 micronmeter-pitch scheme reported here becomes the mainstream for high-resolution CCD image sensors.View full abstractDownload PDF (739K) -
Hiromi Totani, Hiroshi Goto, Mikio MatsumotoArticle type: Article
Session ID: IPU99-86/IDY99-246
Published: October 21, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe developed a optical scanning type of micro image sensor with the dimensions of 2mm x 4mm x 3mm for vision sensor of micro robot. This sensor consisting of a PZT thin film actuator-driven 2D micro optical scanner, a laser diode, photo diodes, and optical elements can measure a shape of an object two-dimensionally and the size of the shape. In order to miniaturize the sensor, new integration structure which is Multilayer Stacked Device structure was applied. This device could also apply to bar-code readers and laser scanning type of displays.View full abstractDownload PDF (1040K) -
Shuntaro Hiroya, Takeyasu Sakai, Toshihisa Watabe, Takashi MatsumotoArticle type: Article
Session ID: IPU99-87/IDY99-247
Published: October 21, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSThe intelligent sensor is known as an architecture which and perform fast parallel image processing. An unit operation circuitry for intelligent sensors must take small areas and lower power dissipation, then we have considered of the differential amplifier with floating gate transistors. In this report, We explain about the differential amplifier, its application, and a prototype chip of the intelligent image sensor for edge detection which is now under fabrication.View full abstractDownload PDF (1210K) -
H. Nishitani, M. Yamamoto, M. Sakai, M. Gotoh, Y. Taketomi, H. Tsutsu, ...Article type: Article
Session ID: IPU99-88/IDY99-248
Published: October 21, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe obtained high performance poly-Si TFTs with a new fabrication method based on a new excimer laser annealing(ELA) process followed by a successive deposition process. The interface was free from contamination as the gate insulator was deposited on the poly-Si just after the annealing process with our newly developed cluster type of apparatus. The ELA process was done in H_2 gas atmosphere with the scanning pitch of the laser beam as small as 2 μm. Large silicon grains up to 4 μm were obtained without significant increase of the surface roughness. Average electron mobility of 285 cm^2/Vs was obtained with good uniformity within a substrate and was found to show a moderate dependence on the laser energy density.View full abstractDownload PDF (548K) -
Article type: Appendix
Pages App1-
Published: October 21, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (86K)
- |<
- <
- 1
- >
- >|