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Displaying 1-15 of 15 articles from this issue
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Article type: Cover
Pages Cover1-
Published: March 18, 2002
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (22K) -
Article type: Index
Pages Toc1-
Published: March 18, 2002
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (59K) -
Toshinobu Sugiyama, Shinichi Yoshimura, Ryoji Suzuki, Hirofumi SumiArticle type: Article
Session ID: IPU2002-13/CE2002-1
Published: March 18, 2002
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSA CMOS sensor with capabilities of color imaging and video rate 3-D sensing has been developed. The sensor consists of a 320x240 pixel array in a l/4-inch image format and an equivalently sized analog frame memory array of current-copier cells. In imaging operation, fixed-pattern-noise is effectively reduced by pixel by pixel readout architecture. High-resolution pixel, small chip size and low power consumption for consumer products have been achieved by introducing column-parallel processing architecture in range sensing operation. The sensor dissipates 36mW under 30frames/s color imaging operation, and 82mW under 3.3kframes/s range sensing operation, and the depth resolution is 2.5mm at the 400mm distance from the sensor. This sensor is fabricated with 0.35μm CMOS image sensor technology.View full abstractDownload PDF (743K) -
Isao Takayanagi, Junichi Nakamura, Eric R. Fossum, Kazuhide Nagashima, ...Article type: Article
Session ID: IPU2002-14/CE2002-2
Published: March 18, 2002
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSA stacked CMOS active pixel sensor (APS) with a newly devised pixel structure for charged particle detection was designed, fabricated and tested. Hot carrier generation at the readout transistor inside the pixel was suppressed, thereby low leakage current as low as 5×10^<-8> V/s at the pixel electrode under low operation temperature was achieved. Ion conversion characteristics were tested with the imager installed in a projection-type Secondary Ion Mass spectrometer (SIMS). Total noise floor and dynamic range were measured to be 3 ions and 84dB for 10keV incident Al ions, respectively.View full abstractDownload PDF (889K) -
Hirofumi Komori, Takashi Miida, Kazuhiro Kawajiri, Hiroyuki Terakago, ...Article type: Article
Session ID: IPU2002-15/CE2002-3
Published: March 18, 2002
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSA 1.5M pixels imager with 4.2μm square pixels is composed of a single MOSFET and a buried photodiode. This device uses single-poly triple-metal 0.35μm CMOS technology with 6 extra photo masks added to the conventional CMOS mask process. A localized high-density p-region near the source of MOSFET converts the accumulated hole number to source voltage. We call this high-density p-region "Hole Pocket" and this device VMIS(Threshold Voltage Modulation Image Sensor). The low random noise, low dark signal, high sensitivity with good color reproduction and resolution is achieved by this technology.View full abstractDownload PDF (756K) -
Jun Ohta, Norikatsu Yoshida, Tesuto Furumiya, Keiichiro Kagawa, Masahi ...Article type: Article
Session ID: IPU2002-16/CE2002-4
Published: March 18, 2002
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSFor the application of a retinal prosthesis device, we formulate output pulse characteristic in a pixel circuit using pulse frequency modulation, and demonstrate that the pulse widening phenomena is caused by the competition between the photocurrent and the charge current. Based on the formulation, we fabricate a 128x128 pixel PFM array chip. We successfully demonstrate the image acquisition by using this chip. Finally, we demonstrate the pulse frequency limitation circuit by introducing a switched capacitor circuit and a leak transistor parallel inserted in the photodiode.View full abstractDownload PDF (559K) -
T.Goji Etoh, Hideaki Mutoh, Kohsei Takehara, Tomoo Okinaka, Yasuhide T ...Article type: Article
Session ID: IPU2002-17/CE2002-5
Published: March 18, 2002
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSAn image sensor of 1,000,000 fps with image storage for consecutive 103 images is developed, which is called ISIS, In-situ Storage Image Sensor. Various innovative ideas support this achievement. Each pixel of the sensor has its own in-situ storage area of image signals during an image capturing phase, image signals generated in the photo-sensitive areas of all pixels are simultaneously recorded in the in-situ storage areas without being readout from the sensor, which realizes parallel recording at all pixels and, thus, image capturing at the ultimate high frame rate.View full abstractDownload PDF (1350K) -
Keiichiro Kagawa, Tomohiro Nishimura, Takao Hirai, Jun Ohta, Masahiro ...Article type: Article
Session ID: IPU2002-18/CE2002-6
Published: March 18, 2002
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe have proposed a new optical wireless LAN (local area network) system based on a vision chip designed for it. The proposed vision chip enables us to detect the positions of communication nodes without mechanical scanning and to receive data from multiple nodes concurrently. The pixel structure of the vision chip is fusion of a conventional APS (active pixel sensor) and a current amplifier without integrating the photocurrent, and we can select one of the operation modes. By use of this pixel, the proposed vision chip realizes a focused readout mode for high-speed optical communication as well as a conventional image sensor mode for node detection. We fabricated TEG's for the proposed vision chip with high-speed photodiodes by use of a standard 0.8um CMOS process, and demonstrated its basic operations.View full abstractDownload PDF (692K) -
Takayuki Kimura, Haruhisa Gotoh, Masaaki Andou, Noboru Takatsuka, Hiro ...Article type: Article
Session ID: IPU2002-19/CE2002-7
Published: March 18, 2002
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSTwo-dimensional images with frequency components higher than the Nyquist frequency of the image sensor were obtained using digital signal processing and optical low-pass filters. 384x384-pixel images were reconstructed from four 192xl92-pixel images. The reconstructed image had frequency components 1.4 times higher than Nyquist frequency of the charge coupled device (CCD) image sensor. The processing method described here can enhance the resolution of the conventional image sensor without requiring modification of the image sensor.View full abstractDownload PDF (1228K) -
Hirokazu Nishie, Kazuo TakahashiArticle type: Article
Session ID: IPU2002-20/CE2002-8
Published: March 18, 2002
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe have been making high-performance, highly-reliable imaging charts. It is required to maintain three factors (materials, exposure, and processing) steady at high level. Uniform density cards (Density inconsistency is less than 0.03), Ladder-pattern resolution charts (Maximum resolution is 1,600 DPI), and patch-style density & color charts are produced as ready-made products. Order-made charts are available such as a chart from a digital image file. The chart is produced with digital & analog photographic technology and its quality is excellent though the production line is long and complicated. We are going to develop and produce more variety photographic products.View full abstractDownload PDF (576K) -
Toshiyuki Tanaka, Takayuki Kimura, Asuka Ono, Hiromitsu ShirakiArticle type: Article
Session ID: IPU2002-21/CE2002-9
Published: March 18, 2002
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESS, , ,In this paper, a new CCD register is proposed to improve some disadvantages of the Full-Flame scheme CCD image sensors. The cell of the register is inverted version of the conventional photo-diode with overflow drain. Then, the register is suitable for back illumination. The leakage current between electrodes and electrode to channel could be reduced to a negligible level by adjusting barrier height. Also, the dark current generated at Si-SiO_2 the interface has proved to flow into electrodes to minimize dark current. The transfer inefficiency for 7×10^4 signal electrons, that is decided by anti-blooming function of the cell, was as low as 10^<-11> within 8ns transfer period for pushing pulse with 4ns fall time. The new CCD register driven by four phase drive pulses could handle several times larger amount of charge than the two phase CCD using hole pinning mode.View full abstractDownload PDF (698K) -
Y. Otsuru, T. Ogo, S. Izawa, Y. Okada, M. Konishi, K. TakekawaArticle type: Article
Session ID: IPU2002-22/CE2002-10
Published: March 18, 2002
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe developed a 1/9-inch CIF format CCD image sensor for mobile phone. Needed specifications for mobile phone are low power consumption, small size and high sensitivity. For low power consumption, we decreased the driving voltage of CCD to operate with 2.8V signal power supply, so that 5 mW of CCD power consumption has been achieved. For small size, we shrank the optical size fiom 1/7-inch to 1/9-inch and adopted the wafer level CSP. For high sensitivity, we developed new inner lens and the sensitivity increased 20%. We developed the 2.8V single power supply camera module that adopted this CCD. Its power consumption is 47mW at 15fps.View full abstractDownload PDF (783K) -
Takeshi MISAWA, Naoki KUBO[, Masafumi INUIYA, Katsumi IKEDA, Kaoru FUJ ...Article type: Article
Session ID: IPU2002-23/CE2002-11
Published: March 18, 2002
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe have developed a 3.3M Pixel Interleaved Array (PIA) CCD image sensor with the HCCD pixel mixture function. It provides both 5 frames/sec 2136-line progressive color pictures and 30 frames/sec 356-line progressive color pictures. The horizontal line memory located between Horizontal transfer CCD (HCCD) and Vertical transfer CCD (VCCD), and eight-phases-drive HCCD helps adding two electric charges of the same color filters. Moreover, sensitivity when frame rate is high is improving by this horizontal pixel mixture function. It is enabled to reduce the number of HCCD using the Horizontal line memory.View full abstractDownload PDF (607K) -
Article type: Appendix
Pages 71-
Published: March 18, 2002
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (74K) -
Article type: Appendix
Pages 71-
Published: March 18, 2002
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (74K)
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