ITE Technical Report
Online ISSN : 2424-1970
Print ISSN : 1342-6893
ISSN-L : 1342-6893
26.5
Showing 1-22 articles out of 22 articles from the selected issue
  • Type: Cover
    Pages Cover1-
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    Download PDF (18K)
  • Type: Index
    Pages Toc1-
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    Download PDF (77K)
  • Masayuki SUGAWARA
    Type: Article
    Session ID: IDY2002-1
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    A demand for applications of higher picture quality imaging systems is emerging as peripheral technologies for handling large amount of digital data has been improved. Image quality improvement technologies in electronic motion picture acquisition are described in this paper. The characteristics of an image acquisition sub system are considered from a point of view of the shrinkage of pixel size. The technologies to increase the data rate of the imaging system are explained. Ultra-high definition imaging and parallel output technologies are particularly taken up for discussion.
    Download PDF (647K)
  • Yoshihiro KIKUCHI
    Type: Article
    Session ID: IDY2002-2
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    Compression coding is a key technology for the transmission and the storage of video signals. Several video compression coding schemes have been standardized by international standardization organizations such as ISO/IEC and ITU-T. MPEG-4 is the newest standard by ISO/IEC. It provides unique functionalities such as transmission-error resiliency for the Internet and the wireless network and multiple object-based video coding. In this paper, MPEG-4 video coding algorithm is briefly explained. Major applications, such as mobile video communication and Internet video delivery, are also introduced.
    Download PDF (594K)
  • Taiichiro KURITA
    Type: Article
    Session ID: IDY2002-3
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    The major causes of deterioration of moving picture quality of displays are laid in temporal responses of the displays. They are divided into two categories: temporal characteristics of display materials, and driving method or displaying method of color or gray-scale. As examples of the latter, motion blur is caused by hold-type displaying of TFT-LCDs, dynamic false contour artifact is caused by sub-field method of PDPs, and color breakup is caused by field-sequential color displaying. There are two methods as basic approach of the improvement: to make displayed light close to an impulse emission like CRTs and use of motion compensation.
    Download PDF (915K)
  • Tadahiro Echigo, Shigeki Naka, Hiroyuki Okada, Hiroyoshi Onnagawa
    Type: Article
    Session ID: IDY2002-4
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    We have investigated a "spray printing method" for organic electroluminescent devices, which is suitable for simple device fabrication technique for large-area and short tact-time. Organic materials used are host polymer of polyvinylcarbazole (PVCz), electron transport material of 2,5-Bis (1-naphthyl)-1,3,4-oxadiazole (BND), and dyes of coumarin 6 (C6, green), perylene (blue), and 4-dicyanomethylene-6-cp-julolidinostyryl-2- tert-butyl-4H-pyran (red). The ratio of PVCz: END: dyes is 160:40:1 and the solution of 0.8 wt% mixture dissolved in 1,2- dichloroethane is used. Fabrication conditions of spray pressure, substrate moving velocity, and distance between substrate and nozzle are investigated. Obtained mean roughness is 50 Å. In the region distant from the center 5mm or more, groove structure is also observed due to gas flow. Current-voltage characteristics of the device are dependent on the dyes material and luminance of 1,910 cd/m^2 is obtained for the single layer device with C6 as dye.
    Download PDF (633K)
  • Hiroki YOSHIHARA, Yoshinori HORII, Yuuichi HINO, Hiroyuki KUSANO, Masa ...
    Type: Article
    Session ID: IDY2002-5
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    We have investigated effect of electron transport material (ETM) on electroluminescence in the PVCz based three-layer polymer light emitting diodes (ITO/HTL/EML/ETL/Mg・Ag). END, PBD, Alq_3, and BCP have been doped as electron transport materials. Device structure was PVCzCz/PVCz:Pe/PVCz:ETM. We have clarified fundamental current transport and luminescent characteristics in the three-layered PVCz polymer LED's that have electron, emission and hole transport layers separately. It was elucidated that a low voltage and high luminance polymer LED's with a luminance higher than 5000cd/m^2 was realized for the first time by the PVCz based 3-layered structure.
    Download PDF (557K)
  • Shinji Nakjima, Akiyoshi Mikami
    Type: Article
    Session ID: IDY2002-6
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    It was found that the luminescent properties were remarkably influenced by the doping of TPD hole-transport material in a single layer polymer EL device. We have investigated the electro-optical behavior in the concentration range up to 69wt.% of TPD. In results, the threshold voltage for the current flow increases monotonically, and the luminance reaches the maximum at approximately 20wt.% of TPD. The device showed the green emission having a peak wavelength of 540nm regardless of TPD contents. We further recognized three kinds of excitation process from PVCz, TPD and Alq3, respectively. The optimized device exhibits twice a luminance and 30% lower threhold voltage for the emission.
    Download PDF (581K)
  • Keiichi ARITA, Yoshinori HORII, Takuya KIYAMA, Hiroyuki KUSANO, Masahi ...
    Type: Article
    Session ID: IDY2002-7
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    Design and electroluminescent properties of PVCz(Poly(N-vinylcarbazole) based color PLED devices doped with TPB, Perylene, Alq3 and Nile Red in a single layer have been investigated. The double layered structure was adoped; ITO/PVCz/PVCz:dyes/Mg-Ag.White emitting devices have been obtained by doping with RGB dyes of appropriate compositions in the emitting layer. Electroluminescent properties of PVCz based white light emitting EL devices have been described and discussed in relation with the dye concentration in the emitting layer. The EL spectrum was calculated to simulate the experimental data for the device doped with mixed dyes in the emission layers.
    Download PDF (596K)
  • Hidetoshi Ninomiya, Yuichi Kinoshita, Noboru Miura, Hironaga Matsumoto ...
    Type: Article
    Session ID: IDY2002-8
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    BaAl_2S_4:Eu thin films were prepared by laser ablation technique. BaAl_2S_4:Eu phosphor is one of the multinaly sulfide phosphor for Inorganic electroluminescenct (EL) display. The influence of significant parameters such as pellets condition, laser fluence and substrate temperature was studied. The thin films prepared by laser ablation technique reflected composition of starting material. The optimized pellets were used as starting material and thin films deposited at a laser fluence of over 2.5J/cm^2 showed blue photoluminescence with a peak around 470nm. It is found that the crystallization of thin film was seriously influenced by laser fuluence.
    Download PDF (483K)
  • Shinichi Nagano, Mitsuhiro Kawanishi, Noboru Miura, Hironaga Matsumoto ...
    Type: Article
    Session ID: IDY2002-9
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    The disorption gases from BaAl_2S_4:Eu film which was annealed in a vacuum chamber were ameasured by Q-MAAS. High vapor pressure materials such as sulfur compounds were observed under thermal desorption spectroscopy (TDS) measurement. Sulfur were formed oxide compounds under annealing. BaAl_2S_4:Eu film contained water. Sulfur concentration in a film depended on a water in a film.
    Download PDF (562K)
  • Keiichi Nomura, Mitsuhiro Kawanishi, Noboru Miura, Hironaga Matsumoto, ...
    Type: Article
    Session ID: IDY2002-10
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    BaMgAl_<10>O_<17>:Eu phosphor thin films were prepared by laser ablation with electron-beam annealing. As ablated film was amorphous and showed yellow PL emission with a peak around 560 nm. Pure blue PL with a peak around 430 nm and crystallized BaMgAl_<10>O_<17>:Eu film was obtained by electron-beam annealing after the deposition. The CIE color coordinate is (x=0.15, y=0.08).
    Download PDF (411K)
  • Kazushi Yamamoto, Akiyoshi Mikami
    Type: Article
    Session ID: IDY2002-11
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    Zr_xSi_yN and ZnS:Mn,LiF thin films have been fabricated as new materials for the high breakdown voltage insulating layer and the red emitting phosphor by a rf-magnetron sputtering technique. Zr_xSi_yN film shows the high breakdown voltage more than 9MV/cm, and applied to an inorganic EL devices with a new phosphor of ZnS:Mn,LiF. It was found that the red emission band appears around 670〜680nm and rapidly grows with the increase of LiF concentration. The color coordinate of (0.62,0.37) was obtained in the red EL device with "color by filter" structure.
    Download PDF (601K)
  • M. M. Sychov, V. V. Bakhmet'ev, S. V. Mjakin, Y. Nakanishi, V. Va ...
    Type: Article
    Session ID: IDY2002-12
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    Recently significant increase was achieved in the brightness of electroluminescent powder phosphors and now new approaches are needed for the further improvement of performance. In this paper we report results of synthesis and electron beam modification of the copper activated zinc sulfide electroluminescent powders. Phosphors were synthesized in closed quartz crucibles. Irradiation was performed with the use of industrial scale resonance-transforming type electron accelerator. It was found that exposure to the 900 keV electrons improves brightness up to 2 times in the absorbed dose range of 2.5-20 MRad. Increase of the brightness is larger at lower driving voltages, that is believed to be due to the difference in irradiation action on smaller and larger phosphor particles. Changes of surface properties caused by electron beam treatment were also studied. Brightness increase accompanied by decrease of amount of specific surface absorption centers similarly as it was previously shown for non-irradiated phosphors. It was suggested that radiation induced annealing of defects and ZnS-Cu_2S solid solution decomposition is responsible for imnrnveme.nt of EL phospors brightness.
    Download PDF (469K)
  • Shintaro Hakamata, Mami Ehara, Hiroko Kominami, Yoichiro Nakanishi, Yo ...
    Type: Article
    Session ID: IDY2002-13
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    CaS:Cu,F thin films have been prepared aiming at development of blue-emitting thin-film EL device with high luminance and good chromaticity. The dependence of structural and photoluminescent properties of CaS:Cu,F thin films prepared by electron beam on annealing temperature and time after the deposition was investigated. As-deposited films showed [110] orientation, however, they did not show any luminescence. Crystallinity and PL intensity of the films improved significantly by the annealing at temperatures higher than 800℃ for up to 10min, the annealed films showed PL with peaks at 420〜430nm, however, the improvements of the structural and PL properties were saturated by the annealing for longer than 10min. From above results, it is concluded that the annealing for around 10min is suitable. The thin-film EL device was fabricated on Si substrate using SiO_2 and Y_2O_3 films as insulator layers, and ZnS films as buffer layers. The device annealed at 850℃ for 15min showed the blue EL nearly the same as PL, although luminance was very weak.
    Download PDF (690K)
  • Tetsuya Shirai, Youhei Kobayashi, Masashi Yamazaki, Toshihiro Miyata, ...
    Type: Article
    Session ID: IDY2002-14
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    The photoluminescent (PL) and electroluminescent (EL) characteristics from Y_2O_3:Mn thin films prepared by sol-gel process, PLD or r.f. magnetron sputtering were found to be strongly dependent on the deposition method as well as the preparation conditions of the thin films. The difference of luminescent characteristics were mainly attributed to the crystal structure of the resulting Y_2O_3:Mn thin films. When the crystal structure of Y_2O_3:Mn thin films was monoclinic, both the PL and EL emissions were observed. But the PL and EL emissions was not observed in Y_2O_3:Mn thin films of which the crystal structure was cubic. High-luminance PL and EL emissions were realized by controlling the crystal structure of the Y_2O_3:Mn thin film.
    Download PDF (520K)
  • Youhei Kobayashi, Masashi Yamazaki, Toshihiro Miyata, Tadatsugu Minami
    Type: Article
    Session ID: IDY2002-15
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    The PL and EL characteristics of new multicomponent oxide {(Y_2O_3)_<1_x>-(GeO_2)_x}:Mn thin films prepared by r.f.magnetron sputtering were strongly dependent on the preparation condition of the thin films. It was found that the GeO_2 content dependence of the maximum luminance obtained in {(Y_2O_3)_<1_x>-(GeO_2)_x}:Mn thin-film electroluminescent (TFEL) devices was similar to that of PL intensity obtained from the thin-film emitting layer used. High luminances above 1000cd/m^2 were obtained in TFEL devices using {(Y_2O_3)_<1_x>-(GeO_2)_x}:Mn thin films prepared with a GeO^2 content of 5 to 84 mol.%. Luminances of 7700 and 724cd/m^2 were obtaind in TFEL devices using {(Y_2O_3)_<0.6>-(GeO_2)_<0.4>}:Mn thin films prepared with a GeO^2 content of 40 mol.%, when driven at 1kHz and 60Hz, respectively.
    Download PDF (437K)
  • Masashi Yamazaki, Youhei Kobayashi, Toshihiro Miyata, Tadatsugu Minami
    Type: Article
    Session ID: IDY2002-16
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    High-luminance photoluminescence (PL) and electoroluminescence (EL) emissions were observed in new Mn-activated Y-Ge-O(Y_2O_3-GeO_2) system ternary compound phosphor thin films prepared by r.f.magnetron sputtering. Luminances of 2500 (68.1), 3020 (414) and 2590 (354) cd/m^2, and luminous efficiencies of 0.8 (3.4), 0.93 (3.3) and 0.22 (2.02)lm/W were obtained in TFEL devices using Y_4GeO_8Mn, Y_2GeO_5 and Y_2Ge_2O_7:Mn phosphor thin films prepared with a GeO_2 content of 33,50 and 67 mol.%. respectively. when driven at 1kHz(and 60Hz).
    Download PDF (522K)
  • H. Matsui, A. Nakamura, T. Aoki, Y. Hatanaka
    Type: Article
    Session ID: IDY2002-17
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    ZnSe_xTe_<1-x> films were grown by remote plasma enhanced MOCVD for the purpose of obtaining the n-type ZnTe based single crystal and the control of its band-gap energy. The resistivity of ZnTe was not changed, when ZnTe films were grown by using n-butyliodine doping. On the other hand, ZnSe_xTe_<1-x> films with the composition ratio x in the range of 0 to 1 have been obtained when change the ratio of Se and Te source. The resistivity of ZnSe_<0.2>Te_<0.8> film was decreased by iodine doping with n-type conductivity. Therefore, ZnSe_xTe_<1-x> films are effective not only band-gap control but also formation of n-type ZnTe based crystal film.
    Download PDF (569K)
  • Yoshimi SHIMIZU, Hidenori NONAKA, Toru AOKI, Yoshinori HATANAKA
    Type: Article
    Session ID: IDY2002-18
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    The a-axis oriented ZnO single crystal films on c-plane sapphire substrate were grown by plasma enhanced metaloganic chemical vapor deposition(MOCVD) using diethylzinc(DEZn) as a source of Zn and oxygen gas. The obtained FWHM of XRD peak for grown ZnO(110) was about 1000s. The Sb doping for p-type ZnO was performed for MOCVD and thermal oxidation grown ZnO film by excimer laser doping. The pn junction was fabricated between the Sb-doped ZnO layer and undoped (naturally n-type) ZnO film. The p-type ZnO layer was obtained by Sb-doping and diode like characteristic was obtained in the pn junction in the case of using ZnO grown by thermal oxidation method.
    Download PDF (456K)
  • Type: Appendix
    Pages App1-
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    Download PDF (73K)
  • Type: Appendix
    Pages App2-
    Published: January 24, 2002
    Released: June 23, 2017
    CONFERENCE PROCEEDINGS FREE ACCESS
    Download PDF (73K)
feedback
Top