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Article type: Cover
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Published: November 21, 2002
Released on J-STAGE: September 20, 2017
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Article type: Index
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Published: November 21, 2002
Released on J-STAGE: September 20, 2017
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Masaki KOBAYASHI, Jun ARAI, Makoto OKUI, Fumio OKANO
Article type: Article
Session ID: IPU2002-82/IDY2002-1
Published: November 21, 2002
Released on J-STAGE: September 20, 2017
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Color moire, a disturbance caused by the structure of the display panel's color filter, has been a problem in the development of a viable Integral Photography system. This report introduces several methods of reducing this disturbance, and quantitatively examines their effectiveness and influence on the resolution of displayed iamges. As the result, the possibility of a method using a combination of a diffuser and defocusing is shown.
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Tomoyuki Shimaguchi, Yasutada Sakamoto, Masanori Okumura, Yoshihiro Ao ...
Article type: Article
Session ID: IPU2002-83/IDY2002-1
Published: November 21, 2002
Released on J-STAGE: September 20, 2017
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In this paper, we propose a discrete-depth plane type three-dimensional display system using multiple liquid crystal board. It was difficult to display the image of the color video of the three-dimensional real space by the conventional system. The authors thought a system which the three dimensional image can be displayed using liquid crystal projector and changing electrically the position of the screen for projector. First, the image made by personal computer is projected by liquid crystal projector. The projected image is projected onto some liquid crystal boards. This liquid crystal board can change screen mode and penetration mode electrically. It is controlling the changing of the mode of the liquid crystal board by the personal computer.
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satoshi MARUYAMA, Yasutada SAKAMOTO
Article type: Article
Session ID: IPU2002-84/IDY2002-1
Published: November 21, 2002
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We developed the turn type three-dimensional display system using arrayed light emitting diodes. This system can display three-dimensional images in real space. It has wide viewing angle and has high brightness. We believe that this sytem will find application in the field of advertisement.
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Masaki Hanada, Masahiro Akiyama, Mitsuaki Ashiki, Hidekuni Takao, Kazu ...
Article type: Article
Session ID: IPU2002-85/IDY2002-1
Published: November 21, 2002
Released on J-STAGE: September 20, 2017
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Highly-sensitive and high-resolution imaging device is demanded. Highly-sensitive and high resolution device wiil be realized using a-Si : H avalanche multiplication photodiode (a-Si : H APD) which was stacked on read-out circuit. The a-Si : H APD was applied high voltage. So we investigated the effect for read-out circuit that applied high voltage in a-Si ; H APD. The read out characteristics was not changed by the effect at high voltage region. The γ value was changed by the high voltage.
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Hiroshi OHTAKE, Yuki MATSUSHITA, Tetuya HAYASHIDA, Yuichi ISHIGURO, Yo ...
Article type: Article
Session ID: IPU2002-86/IDY2002-1
Published: November 21, 2002
Released on J-STAGE: September 20, 2017
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In the fabrication of a solid-state HARP imaging device, one of the most essential processes is connecting the HARP film and CMOS readout circuit. Although an indium bump method has been used for its easiness, the fixed pattern noise (FPN) caused by unevenness of the indium bumps prevented this device from being practical. To solve this problem, we propose placing Au electrodes on the HARP film for each pixel. This new structure successfully overcame the problem of the FPN.
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Y. Takiguchi, K. Osada, K. Miyakawa, M. Nanba, S. Okazaki, T. Yamagish ...
Article type: Article
Session ID: IPU2002-87/IDY2002-1
Published: November 21, 2002
Released on J-STAGE: September 20, 2017
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To investigate the resolution characteristics of a FEA image sensor, the effective electron spread from the FEA, which mainly determines the resolution of FEA image sensors, was simulated. The simulation results showed that the mesh electrode between HARP and FEA could suppress the electron spread effectively, which agrees with the experimental results of the prototype sensor.
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Tetsuharu UTSUBO, Youhei KOBAYASHI, Toshihiro MIYATA, Tadatugu MINAMI
Article type: Article
Session ID: IPU2002-88/IDY2002-1
Published: November 21, 2002
Released on J-STAGE: September 20, 2017
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A new host material for electroluminescent (EL) phosphors consisting of Y_2O_3-based multicomponent oxide has been developed. High-luminance yellow-emitting thin-film EL (TFEL) device were fabricated using a newly developed Mn-activated (Y_2O_3)_<0.6>-(GeO_2)_<0.4> phosphor. Luminances above 6000 and 550 cd/m^2 and luminous efficencies above 0.6 and 4 lm/W were abtained in at TFEL device fabricated using a 0.5 μm-thick-((Y_2O_3)_<0.6>-(GeO_2)_<0,4> : Mn phophor thin film and driven at 1 kHz and 60 Hz, respectively.
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Youhei KOBAYASHI, Toshihiro MIYATA, Tadatugu MINAMI
Article type: Article
Session ID: IPU2002-89/IDY2002-1
Published: November 21, 2002
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High-luminance thin-film electroluminescent devices were fabricated using newly developed Mn-activated (Y_2O_3)_<1-x> phosphors with a Gd_2O_3 content of 0 to 100 mol.%. Luminances of 3020 and 287 cd/m^2 for yellow emission were obtained in a device fabricated using a ((Y_2O_3)_<0.67>-(Gd_2O_3)_<0.33>) : Mn thin-film emitting layer and driven at 1 kHz and 60 Hz, respectively.
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Masashi Yamazaki, Toshihiro Miyata, Tadatsugu Minami
Article type: Article
Session ID: IPU2002-90/IDY2002-1
Published: November 21, 2002
Released on J-STAGE: September 20, 2017
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High-luminance green emitting thin-film EL devices have been fabricated using Mn-activated Zn(Ga_<1-X>AL_X)_2O_4 : Mn phosphor thin films prepared by pulsed-laser deposition or rf magnetron sputtering. A high luminance above 1000cd/m2 was obtained in a 1kHz-driven TFEL device using a Zn(Ga_<1-X>AL_X)_2O_4 : Mn thin film prepared by pulsed-laser deposition.
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Hidekazu Tamaki, Hiroko Kominami, Youichiro Nakanishi, Yoshinori Hatan ...
Article type: Article
Session ID: IPU2002-91/IDY2002-1
Published: November 21, 2002
Released on J-STAGE: September 20, 2017
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Red-emitting CaS : Eu thin film electroluminescence (TFEL) devices were fabricated on Si substrates by the electron beam evaporation and its luminescent properties were investigated. PL spectrum of CaS : Eu phosphor was measured under excitation with 325nm of He-Cd laser at room temperature. It was shown that PL spectrum, where concentration of Eu was 1.0 at%, showed strong red emission with a peak at about 650nm. Standard double insulator structure was employed for EL device fabrication using SiO_2 and Y_2O_3 films as insulating layers. The TFEL devices prepared with annealing at 800℃ for 15min in H_2S showed the same red emission as PL spectrum. At the same time, CIE color coordinates x=0.67, y=0.32 could be obtained from the device with a Eu content of 1.0 at%.
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Article type: Appendix
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Published: November 21, 2002
Released on J-STAGE: September 20, 2017
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Article type: Appendix
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Published: November 21, 2002
Released on J-STAGE: September 20, 2017
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