All issues
Predecessor
27.4
Displaying 1-23 of 23 articles from this issue
- |<
- <
- 1
- >
- >|
-
Article type: Cover
Pages Cover1-
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (12K) -
Article type: Index
Pages Toc1-
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (88K) -
Tatsuya Ikeda, Fumiya Shigematsu, Yasuo TomitaArticle type: Article
Session ID: IDY2003-1
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSRecently, as the LCD size becomes larger, the diameter of the CCFL which is used as the backlight becomes bigger and the length of the CCFL becomes longer. The CCFL for the large size LCD is required for the high luminance, the long life time, the decrease in the chromaticity variations at the both ends of the CCFL, and the high efficiency. In this paper, the CCFL's characteristics depended on the phosphor layer condition are investigated. As the diameter of the lamp becomes bigger, the UV rays density irradiated on the phosphor becomes more thin. By conditioning the size of the phosphor particle and the thickness of the phosphor layer, the UV rays are led to the phosphor layer's depth portion, and the 3% improvement of the CCFL's luminance are realized.View full abstractDownload PDF (417K) -
Keiji ISHII, Yoshikuni HIRANO, Yasushi MOTOYAMA, Yukio MURAKAMIArticle type: Article
Session ID: IDY2003-2
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSA positive column cell, which radiates the vacuum-ultraviolet light from the positive column region, has high luminous efficiency. To investigate the relation between the exited atoms density and luminous efficiency, we measured the spatial density distribution of excited Xe atoms in the positive column region by laser spectroscopy absorption. Though the density of excited Xe atoms increased according to the increase in discharge current, the positive column region contracted toward the anode side. Next, we investigated the density of excited Xe atoms of the narrowed cell, which varies the cell width from 0.12 to 0.36 mm under the same discharge current. The density of excited Xe atoms increased according to the decrease in cell width. It is clearly that the higher density of exited Xe particles near the wall serves to excite the phosphor of the inner cell wall.View full abstractDownload PDF (570K) -
Norihiko KAMATA, Wataru OKAMOTO, Naoto KIJIMAArticle type: Article
Session ID: IDY2003-3
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSThe intensity change of a photoluminescence (PL) due to the addition of a below-gap excitation (BGE) light reveals the properties of a below-gap state quantitatively. We observed a transient PL of Eu^<3+> due to the BGE in a Y_2O_2S:Eu^<3+> phosphor, and studied its Eu^<3+> concentration dependence. The result indicates that the trap center originates from a native defect of the host crystal, not from the Eu^<3+> incorporation.View full abstractDownload PDF (451K) -
Ryo INOUE, Masaaki KOMATSU, Masatoshi SHIIKI, Shin IMAMURAArticle type: Article
Session ID: IDY2003-4
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe measured the electron-penetration depths for layers of ZnS particles by stacking ZnS-phosphor material on another phosphor layer, that were the two-layered structure with varying the thickness and particle diameter of the upper layer, at a low excitation voltages. Additionally, we calculated the penetration depths by Monte Carlo simulation with varied values for density of the ZnS-particle layer. The measured penetration depths varied with the particle diameter and were much deeper than the calculated depths. The layer densities in calculation had to be reduced to fit the results to the measured values. The depths of electron-penetration into ZnS-particle layers were affected by density fluctuations.View full abstractDownload PDF (508K) -
Manabu OGURA, Hajime YAMAMOTOArticle type: Article
Session ID: IDY2003-5
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSSome III-group impurities, e.g. B^<3+>, Sc^<3+>, Y^<3+> or Gd^<3+>, added to a red phosphor SrIn_20_4:Pr^<3+> for low-energy electron excitation, improve luminescence efficiency, while another impurity, La^<3+>, decreases efficiency. This work investigates the mechanism of this impurity effect, particularly the difference between Gd^<3+> and La^<3+> in improving efficiency. The sites where these ions replace in SrIn_20_4 lattice are discussed with powder X-ray diffraction and luminescence spectra measurements. The impurity effect on luminescence efficiency is discussed based on a following model; III-group impurities substituting In^<3+> site improve the luminescence efficiency of Pr^<3+> by capturing electrons in competition with oxygen ion vacancies, which work as nonradiative centers at higher temperature. In contrast III-group impurities substituting Sr^<2+> site decreases efficiency by increasing oxygen ion vacancies.View full abstractDownload PDF (441K) -
H. Nakajima, M. Iwamaru, K. Sawada, T. Ono, H. Kominami, Y. Nakanishi, ...Article type: Article
Session ID: IDY2003-6
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSPreparation of SrGa_2S_4:Eu thin films have been carried out by multi source deposition technique, then the structural and luminescent properties of the films were characterized. It was shown in this experiment that the crystallinity, luminance and chromaticity of emission were improved by the annealing in H_2S atmosphere. These thin films excited by electron beam showed green emission due to SrGa_2S_4:Eu under excitation with 2kV and 60 μA/cm^2. Next CL characteristics of SrGa_2S_4:Eu thin film combined with Si-type field emitter were investigated. It showed the luminance of 5 cd/m^2 and luminous efficiency of 0.2 lm/W, respectively, under the excitation with 1kV and 8 μA/cm^2.View full abstractDownload PDF (465K) -
Masashi IWAMARU, Hiroyoshi NAKAJIMA, Hiroko KOMINAMI, Yoichirou NAKANI ...Article type: Article
Session ID: IDY2003-7
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSIt is expected that thin film phosphors showing R, G and B three-color emissions by using same host material in the field emission displays (FEDs) are developed. We so far obtained blue and green emissions with high luminance from SrGa_2S_4 thin film phosphors activated with Ce or Eu, respectively. In this study, we tried the preparation of SrGa_2S_4:Pr and SrGa_2S_4:Mn thin films with the aim of red emission. These thin film phosphors were deposited on quartz glass substrates by using the multi-source deposition (MSD). These films were annealed at 800-900℃ in Ar+1% H_2S atmosphere after the deposition. Both films did not show spectra which red emission is dominant, although green from Mn showed a luminance of 30 cd/m^2 and CIE color coordinates of (0.30,0.63), and blue-green from Pr showed a luminance of 10 cd/m^2 and CIE color coordinates of (0.33,0.43).View full abstractDownload PDF (436K) -
Takahiro KIMURA, Hidekazu OKA, Kousuke TAKASU, Haruki FUKADA, Koutoku ...Article type: Article
Session ID: IDY2003-8
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSSrS:Ce transparent thin film electroluminescent (EL) devices having a glass substrate and both-sides transparent ITO electrodes have been prepared by electron beam evaporation method. Ce^<3+> luminescence easily changed by deposition methods and conditions and has not been reproduced yet. In this study, we made efforts to reproduce bluish-green Ce^<3+> luminescence. The relation between Ce^<3+> luminescence and deposition atmosphere was investigated using a QMS (quadrupole mass spectroscopy) measurement. Bluish-green consistent Ce^<3+> luminescence with higher luminance and efficiency can be achieved for the SrS:Ce TFEL devices prepared in the atmosphere of both proper moisture atmosphere and excess sulfur supply. Maximum luminance, efficiency and CIE color coordinate are 340 cd/m^2, 0.15 lm/W and (0.18, 0.33), respectively.View full abstractDownload PDF (517K) -
Mami EHARA, Shintaro HAKAMATA, Haruki FUKADA, Hiroko KOMINAMI, Yoichir ...Article type: Article
Session ID: IDY2003-9
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESS(Sr_<1-x>Ca_x)S:Cu,F solid solution thin films were deposited using solid solution evaporation source by electron beam evaporation and then annealed at 900℃ in Ar or H_2S by rapid thermal annealing (RTA) technique. The shifts toward tohigher 2 θ of XRD peaks and shorter wavelength of PL spectra with increasing x could be obtained. It was suggest that the annealing in H_2S induces Sr lack and formation of Cu^+-Cu^+ dimer center. The thin film electroluminescent (TFEL) devices using the S:Cu,F thin films annealed by RTA in Ar or co-deposited with H_2S were fabricated. They showed CIE color coordinates of (0.16, 0.23) and (0.16, 0.21), respectively. The results suggest that the TFEL devices with good chromaticity can be fabricated by using the SrS:Cu,F solid solution thin films.View full abstractDownload PDF (555K) -
Haruki FUKADA, Asuka SASAKURA, Takahiro KIMURA, Koutoku OHMI, Shosaku ...Article type: Article
Session ID: IDY2003-10
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSAlkali metal doped SrS:Ce,M (M=Na, K, or Rb) thin film EL devices have been prepared by electron-beam evaporation. Alkali metal doping causes suppression of formation of Sr vacancies, and results in decrease of Ce^<3+>-V_<Sr> complex center formation. Among those dopants, Rb is the most effective. The SrS:Ce,Rb phosphor powder prepared with Ce concentration of 1.0 mol% shows the strongest photoluminescence with the bluish-green luminescence due to isolated Ce^<3+> centers.View full abstractDownload PDF (536K) -
Youhei KOBAYASHI, Yasuyuki SUZUKI, Toshihiro MIYATA, Tadatugu MINAMIArticle type: Article
Session ID: IDY2003-11
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSHigh-luminance thin-film electroluminescent devices were fabricated using newly developed Mn-activated (Y_2O_3)_<1-x>-(Ga_2O_3)_x phosphors with a Ga_2O_3 content of 0 to 100 mol.%. Luminances of 7250 cd/m^2 for yellow emission and 1258 cd/m^2 for green emission were obtained in a devices fabricated using a ((Y_2O_3)_<0.5>-(Ga_2O_3)_<0.5>):Mn and a ((Y_2O_3)_<0.3>-(Ga_2O_3)_<0.7>):Mn thin-film emitting layer, respectively.View full abstractDownload PDF (392K) -
Masayuki Minami, Hiroyuki Mishima, Mitsuhiro Kawanishi, Noboru Miura, ...Article type: Article
Session ID: IDY2003-12
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSEffects of Mg and Zn doping into the CaS:Eu, SrS:Eu and BaS:Eu were studied. Ca_<0.8>Mg_<0.2>S:Eu, Sr_<0.6>Mg_<0.4>S:Eu and Ba_<0.6>Zn_<0.4>S:Eu phosphors had red PL with peak of 666 nm, 619 nm and 650 nm, respectively. The PL intensity of these materials was four or five times higher than that of undoped phosphors.View full abstractDownload PDF (414K) -
Kousuke MISHIMA, Noboru MIURA, Hironaga MATSUMOTO, Ryotaro NAKANOArticle type: Article
Session ID: IDY2003-13
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSMn^<2+> doped ZnAl_2S_4 and MgAl_2S_4 phosphors for electroluminescent devices were investigated. These phosphors showed orange emission with the peak at 600 nm and 605 nm, respectively. MgAl_2S_4:Mn^<2+> thin films were prepared by two-target pulsed evaporation technique. Substrate temperature and post-annealing condition for MgAl_2S_4:Mn^<2+> films were explored. MgAl_2S_4:Mn^<2+> electroluminescent devices showed orange emission and the CIE color coordinate is (x=0.584, y=0.410). Maximum luminance was 118 cd/m^2 under 1 kHz sinusoidal wave voltage.View full abstractDownload PDF (387K) -
Yoshiaki Ono, Mitsuhiro Kawanishi, Noboru Miura, Hironaga Matsumoto, R ...Article type: Article
Session ID: IDY2003-14
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSThe high Luminance electroluminescent (EL) device having excellent color coordinates were developed. A CaAl_2S_4:Eu phosphor exhibited the purest green photoluminescence among Eu^<2+> ion doped IIa-IIIb_2-S_4 group phosphors. CaAl_2S_4:Eu EL devices were prepared by the two target pulsed-electron-beam evaporation method. The maximum luminance level under 1 kHz sinusoidal wave voltages was over 4,000 cd/m^2. Commission Interantionale de 1'Eclairage (CIE) color coordinates were x=0.121, y=0.670.View full abstractDownload PDF (391K) -
Aki MIYAKE, Takato NAKAMURA, Naoto AZUMA, Toru AOKI, Hiroko KOMINAMI, ...Article type: Article
Session ID: IDY2003-15
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSZnO epitaxial thin film was obtained on Si substrate by oxidation of ZnS epitaxial thin film deposited on Si substrate. This oxidation process was analyzed by using Gibbs free energy calculation and TG-DTA measurement. TG curve had one step and the weight change showed about 16.4% decrease. DTA curve had one peak. It was shown from calculation result and TG-DTA, ZnS is changed to ZnO by one step. Expected reactions are ZnS+3/2O_2→ZnO+SO_2,ZnS+2O_2→ZnO+SO_3,ZnS+1/2O_2→ZnO+1/2S_2.View full abstractDownload PDF (463K) -
Yoshimi SHIMIZU, Atsushi NAKAMURA, Toru AOKI, Jiro TEMMYOUArticle type: Article
Session ID: IDY2003-16
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSc-plane ZnO films were grown on a-plane sapphire substrate by remote plasma enhanced chemical vapor deposition using a diethylzinc and oxygen gas with hydrogen plasma radicals, which was generated by rf-hollow cathode jet plasma, in order to decompose the diethylzinc at low temperature. ZnO (0001) films were grown on sapphire (11-20) substrates at substrate temperature 300℃. Deep emission of PL spectra was decreased by control of H_2 and O_2 gas flow ratio.View full abstractDownload PDF (433K) -
Atsushi NAKAMURA, Yoshimi SHIMIZU, Toru AOKI, Akira TANAKA, Jiro TEMMY ...Article type: Article
Session ID: IDY2003-17
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSZnO has been grown by a remote plasma enhanced MOCVD technique using Oxygen plasma from Diethyl Zinc (DEZn). When hydrogen and nitrogen were used as carrier gas, the difference was looked at by the growth rate of ZnO film, and growth rate became large when a hydrogen carrier was used. Moreover, growth rate changed also with the rates of hydrogen gas flux and plasma oxygen flux. From the result which measured the plasma luminescence spectrum at the time of crystal growth, the growth mechanism by the interaction by oxygen plasma and hydrogen gas was proposed.View full abstractDownload PDF (503K) -
Hiroshige Matsui, Toru Aoki, Jiro Temmyo, Yoshinori HatanakaArticle type: Article
Session ID: IDY2003-18
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSZnSe_xTe_<1-x> alloy films were grown by remote plasma enhanced MOCVD for the purpose of obtaining the n-type ZnTe based single crystal and the control of its band-gap energy. The resistivity of ZnTe was not changed although n-butyliodine was introduced as a dopant source in ZnTe films growth. On the other hand, ZnSe_xTe_<1-x> films with the composition ratio x in the range of 0 to 1 have been obtained by changing the ratio of Seand Te source. The resistivity of ZnSe_<0.2>Te_<0.8> film was decreased about 100 Ω cm with n-type conductivity by iodine doping. Therefore, ZnSe_xTe_<1-x> films are effective not only band-gap control but also formation of n-type ZnTe based crystal film.View full abstractDownload PDF (467K) -
Kazuhiko HARA, Eri OKUYAMA, Atsushi YONEMURAArticle type: Article
Session ID: IDY2003-19
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSAiming at application of GaN powders for phosphors, GaN crystalline powders doped with luminescent impurities have been synthesized by the two-stage vapor phase method. The source of impurity was placed at the same position in the reactor for the stage of particle growth, and supplied with GaCl to the reaction zone. With Tb, Tm and ZnS as sources, this method successfully produced GaN:Tb, GaN:Tm and GaNrZn powders with impurity concentrations of 6 × 10^<19>, 4 × 10^<20> and 1.5 × 10^<20> cm^<-3>, respectively. The GaN:Tb powder showed the photoluminescence (PL) emission bands due to the transitions of f-electrons in Tb^<3+> ions. It was found that the annealing at 1000 ℃ in the atmosphere of NH_3 activates the Zn centers in the GaN:Zn powder, resulting in the emission of blue PL.View full abstractDownload PDF (413K) -
Article type: Appendix
Pages App1-
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (74K) -
Article type: Appendix
Pages App2-
Published: January 27, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (74K)
- |<
- <
- 1
- >
- >|