ITE Technical Report
Online ISSN : 2424-1970
Print ISSN : 1342-6893
ISSN-L : 1342-6893
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34.13
Displaying 1-13 of 13 articles from this issue
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  • [title in Japanese]
    Article type: Cover
    Pages Cover1-
    Published: March 12, 2010
    Released on J-STAGE: September 21, 2017
    DOIhttps://doi.org/10.11485/itetr.34.13.0_Cover1
    CONFERENCE PROCEEDINGS FREE ACCESS
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  • [title in Japanese]
    Article type: Index
    Pages Toc1-
    Published: March 12, 2010
    Released on J-STAGE: September 21, 2017
    DOIhttps://doi.org/10.11485/itetr.34.13.0_Toc1
    CONFERENCE PROCEEDINGS FREE ACCESS
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  • Analysis tolerance of holographic memory by simulation
    Tomohiro OHORI, Shuhei YOSHIDA, Manabu YAMAMOTO
    Article type: Article
    Session ID: MMS2010-17
    Published: March 12, 2010
    Released on J-STAGE: September 21, 2017
    DOIhttps://doi.org/10.11485/itetr.34.13.0_1
    CONFERENCE PROCEEDINGS FREE ACCESS
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    In this study, recording/reproduction simulation method was studied to establish design method that would be used to evaluate tolerance levels, especially during recording and reproduction. Simulation methods were developed for both 3-dimensional beam propagation method and 2-dimensional multi-layered method. By using these two methods, the recording/reproduction characteristics are analyzed and a tolerance examination about influence of wavefront aberration to the reproduction signal quality is studied in this paper.
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  • Analysis of Photopolymer Media Characteristics by Pulse Train Recording Method
    Junya Nishide, Akiyo Goto, Shuhei Yoshida, Manabu Yamamoto
    Article type: Article
    Session ID: MMS2010-18
    Published: March 12, 2010
    Released on J-STAGE: September 21, 2017
    DOIhttps://doi.org/10.11485/itetr.34.13.0_7
    CONFERENCE PROCEEDINGS FREE ACCESS
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    In holographic memories, photopolymer is a hopeful material as a recording medium. We simulated the formation of diffraction gratings by using the diffusion model and analyzed their diffraction characteristics by beam propagation method and we examined a recording characteristics of the pulse train recording by read/write simulation in the photopolymer medium. As a result, the recording sensitivity for pulse recording is deteriorated compared with the single long pulse recording.
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  • High density recording and Tolerance analysis for 500GB Holographic Memory System using Monocular Architecture
    Ken-ichi SHIMADA, Toshiki ISHII, Makoto HOSAKA, Taku HOSHIZAWA
    Article type: Article
    Session ID: MMS2010-19
    Published: March 12, 2010
    Released on J-STAGE: September 21, 2017
    DOIhttps://doi.org/10.11485/itetr.34.13.0_13
    CONFERENCE PROCEEDINGS FREE ACCESS
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    In general, the optical configuration of angularly multiplexing holographic memory system is complicated because optics for both signal and reference beam are necessary. As an attractive candidate for a compact holographic memory system, we have developed a Monocular architecture and examined the feasibility of 500GB system using this architecture. In this study, high density recording for 500GB system was achieved by a new test-bed composed of a blue laser system and high NA objective lens. In addition, tolerance analysis for margin allocation was performed to make clear the technical difficulty of 500GB system.
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  • Structural Variation and Control of Magnetic Properties of MnBi Thin Films by Kr^+ Ion Irradiation
    Seisen JYO, Takeshi KATO, Satoshi IWATA, Shigeru TSUNASHIMA
    Article type: Article
    Session ID: MMS2010-20
    Published: March 12, 2010
    Released on J-STAGE: September 21, 2017
    DOIhttps://doi.org/10.11485/itetr.34.13.0_21
    CONFERENCE PROCEEDINGS FREE ACCESS
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    MnBi (15nm) thin films were prepared by the magnetron sputtering of Mn/Bi multilayers followed by vacuum annealing of 350℃, and the variation of their structures and magnetic properties with 30keV Kr^+ ion irradiation was studied. The Mn_<52>Bi_<48> (15nm) film exhibited a magnetization of 180emu/cc, which was 1/3 of the reported value, but it exhibited a large coercivity of 10kOe resulting from large perpendicular anisotropy of this film. The magnetization and coercivity of the Mn_<52>Bi_<48> film were disappeared after a low ion dose of 3.1 x 10^<14>ions/cm^2. However, the existence of NiAs type MnBi phase and uni-directional anisotropy was confirmed by X-ray diffraction and torque magnetometer, respectively, even after the ion irradiation of 1 x 10^<15>ions/cm^2. From atomic force microscope and magnetic force microscope observations, there existed convex surface structures with a height of 〜50nm on the MnBi films, and MnBi phase underneath the convex structures exhibited ferromagnetism even after the ion irradiation of 1 x 10^<15>ions/cm^2. The surviving MnBi phases were considered to be magnetically isolated, and the existence of the isolated MnBi phases explained the variation of the structure and magnetic properties with the ion irradiation. From these results, transformation between ferromagnetic and nonmagnetic MnBi alloys by a low dose ion irradiation of 〜3 x 10^<14>ions/cm^2 was expected.
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  • Ultra thin FePt films with perpendicular magnetic anisotropy fabricated from Fe/Pt/X trilayers
    Yuji Ogata, Yasuharu Imai, Shigeki Nakagawa
    Article type: Article
    Session ID: MMS2010-21
    Published: March 12, 2010
    Released on J-STAGE: September 21, 2017
    DOIhttps://doi.org/10.11485/itetr.34.13.0_27
    CONFERENCE PROCEEDINGS FREE ACCESS
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    L1_0-FePt ordered alloy thin films were fabricated by annealing Fe/Pt/X trilayers to control magnetic properties suitable for next generation perpendicular magnetic recording media. Cu and Au were used to get magnetic properties suitable for heat assisted magnetic recording media and to fabricate FePt ordered phase at low annealing temperature, respectively. It was confirmed that the curie temperature of FePtCu films was 280℃ and perpendicular coercivity decreased to 1kOe at around the curie temperature. Though it needed at least 550℃ of annealing temperature to get L1_0-FePt ordered alloy, FePt was successfully attained at lower annealing temperature (500℃) by adding Au into FePt.
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  • Temperature dependence of local magnetism for Heusler alloy films prepared using atomically-controlled alternate deposition
    Takahiro HORI, Yoshiki ISHIKAWA, Yuki WADA, Masaaki TANAKA, Ko MIBU
    Article type: Article
    Session ID: MMS2010-22
    Published: March 12, 2010
    Released on J-STAGE: September 21, 2017
    DOIhttps://doi.org/10.11485/itetr.34.13.0_33
    CONFERENCE PROCEEDINGS FREE ACCESS
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    We investigated the local magnetism and its temperature dependence for Co-based Heusler alloy films with different degrees of crystalline order and the different kinds of interfaces. Two series of samples were grown by atomically-controlled alternate deposition; Co_2TiSn films with different degrees of crystalline order, and Co_2MnSn/(Cr or Ag) multilayered films with different interfacial atomic species. The magnetic hyperfine field was measured by ^<119>Sn Mossbauer spectroscopy. It was found that the temperature dependence of the local magnetism in the Co_2TiSn films depends on the degree of L2_1 order. It was also observed for Co_2MnSn/(Cr or Ag) multilayers that the influence of interfacial atoms on the local magnetism is large in the case of Cr and small in the case of Ag, but no significant temperature dependence was observed in both systems.
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  • Spin filtering through a ferromagnetic La_2NiMnO_6 tunnel barrier
    Toshifumi KATSURAGI, Yuya MIYAZAKI, Yuichi SHIJI, Masaaki TANAKA, Ko M ...
    Article type: Article
    Session ID: MMS2010-23
    Published: March 12, 2010
    Released on J-STAGE: September 21, 2017
    DOIhttps://doi.org/10.11485/itetr.34.13.0_39
    CONFERENCE PROCEEDINGS FREE ACCESS
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    We investigated magnetic tunnel junctions (MTJs) La_<0.7>Sr_<0.3>MnO_3(LSMO)/LaTiO_3/La_2NiMnO_6(LNMO)/Cr/Au which were fabricated on SrTiO_3 substrates to examine spin-filtering effect through the ferromagnetic insulator LNMO by the measurement of tunnel magnetoresistance (TMR). The MTJ showed TMR ratio of about 19% at 50K and about 10% at 110K accompanied by the change of magnetization configuration of LSMO and LNMO from parallel to antiparallel. The spin polarization of the tunnel current through the LNMO barrier was estimated to be about 9% at 50K and about 4% at 110K.
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  • Structual and magnetic properties of Heusler alloy thin films and artificial lattices on MgAl_2O_4 substrate
    Yoichi TAKEDA, Naoto FUKATANI, Kazunari TAKAHASHI, Hirohito FUJITA, Ke ...
    Article type: Article
    Session ID: MMS2010-24
    Published: March 12, 2010
    Released on J-STAGE: September 21, 2017
    DOIhttps://doi.org/10.11485/itetr.34.13.0_45
    CONFERENCE PROCEEDINGS FREE ACCESS
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    In order to clarify the relationship between lattice distortion and magnetic properties of Heusler alloy, the structural and magnetic properties of Fe_2VSi single layer and [Fe_2CrSi/Fe_2VSi]_5 artificial lattice deposited on Mg_2Al_2O_4 substrate have been investigated. The lattice misfit between Fe_2YSi(Y=Cr, V) and MgAl_2O_4 is as small as 0.7%, and it is known that Fe_2CrSi and Fe_2VSi shows antiferomagnetism and ferromagnetism. The lattice distortion of Fe_2VSi films have been provided by using MgAl_2O_4 substrate and the Neel temperature (T_N) increases with decreasing c/a value. The maximum T_N of Fe2VSi on MgAl2O4 substrate is 57% larger than bulk value. The saturation magnetization artificial lattice using ultra thin (1.4nm) Fe_2VSi layers is a little larger than Fe_2CrSi single layer.
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  • [title in Japanese]
    Article type: Appendix
    Pages App1-
    Published: March 12, 2010
    Released on J-STAGE: September 21, 2017
    DOIhttps://doi.org/10.11485/itetr.34.13.0_App1
    CONFERENCE PROCEEDINGS FREE ACCESS
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  • [title in Japanese]
    Article type: Appendix
    Pages App2-
    Published: March 12, 2010
    Released on J-STAGE: September 21, 2017
    DOIhttps://doi.org/10.11485/itetr.34.13.0_App2
    CONFERENCE PROCEEDINGS FREE ACCESS
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  • [title in Japanese]
    Article type: Appendix
    Pages App3-
    Published: March 12, 2010
    Released on J-STAGE: September 21, 2017
    DOIhttps://doi.org/10.11485/itetr.34.13.0_App3
    CONFERENCE PROCEEDINGS FREE ACCESS
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