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Article type: Cover
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Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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Article type: Index
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Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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Hiroki Sasaki, Yusuke Higashi, Hirofumi Yamashita, Takeshi Yoshida, No ...
Article type: Article
Session ID: IST2013-42
Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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In this paper, we analyze the mechanism of Dark fixed pattern noise generation in CMOS imager pixel with negative transfer-gate bias operation by both measurement data and simulation. Our results show the noise generation is caused by re-combination between electrons from photo-diode and holes trapped at interface state when negative bias is applied to transfer transistor.
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Masayuki HAYASHI
Article type: Article
Session ID: IST2013-43
Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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We have developed a new organic CMOS image sensor with a thin overlaid panchromatic organic photoelectric conversion layer as a candidate for sensors in the next generation. The high durability of the organic photoelectric conversion layer, which satisfies a variety of requirements by customers, was attained by the application of a new inorganic protecting layer to it. The wide dynamic range, which is four times higher than that of conventional CMOS image sensor, was attained by the incorporation of a new storage node with large capacity in a signal read-out circuit.
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Hiroki YABE, Makoto IKEDA
Article type: Article
Session ID: IST2013-44
Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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We propose and show the successful operation of a structured light based 3-D acquisition system with our developed special-purpose CMOS image sensor for background suppression and frequency and phase detection. In our system, the angular information for triangulation is encoded in the frequency and phase of the signal light so that it can be distinguished from background light in the frequency domain. A high-speed DMD projector projects this signal light which contains high-frequency components. The CMOS image sensor is capable of extracting the frequency and phase information of the incoming light signal while suppressing the background light. The measured signal to background ratio (SBR) is -5.5dB at 10fps operation and -21dB at slower operation. The range measurement accuracy is 0.68cm at the distance of 18-24cm.
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Keita YASUTOMI, Takahiro Usui, Masatoshi Kodama, Taishi Takasawa, Keii ...
Article type: Article
Session ID: IST2013-45
Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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This paper describes new TOF measurement technique for high range resolution of the order of sub-mm or several tens of urn. For the distance caliculation, impulse response of photocurrent by means of very short light pulse is used. A draining-only modulation pixel provides high response and loss-free electron integration. The test chip fabricated in 0.11 um CIS technology demonstrates modulation contrast is measured to be 85%. The average range resolution is measured to be 210 urn at measurable range of 50 mm.
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Takashi TOKUDA, Masayuki TAKAHASHI, Kazuhiro UEJIMA, [in Japanese], Ya ...
Article type: Article
Session ID: IST2013-46
Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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Glucose monitoring device using an implantable CMOS image sensor combined with glucose-sensitive fluorescence hydrogel is fabricated and demonstrated. An intensity change of fluorescence from the hydrogel was measured and we confirmed that the intensity change represents the glucose concentration.
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Rihito KURODA, Shun KAWADA, Satoshi NASUNO, Taiki NAKAZAWA, Yasumasa K ...
Article type: Article
Session ID: IST2013-47
Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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In this paper, a 5.6 μm pixel pitch CMOS image sensor with a wide spectral response and high robustness to ultraviolet light (UV-light) exposure is reported. In the in-pixel buried pinned photodiode, a surface thin p^+ layer with a steep dopant profile is uniformly formed on the flattened Si surface to improve the UV-light sensitivity and the stability of the light sensitivity to a strong UV-light exposure. The fabricated chip exhibited a spectral response to the wide light waveband of 200-1000 nm, and the sensitivity degradation did not occur after the strong UV-light exposure stress.
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Shoji KAWAHITO
Article type: Article
Session ID: IST2013-48
Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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This article describes analog-to-digital converter technology for high definition high frame rate image sensors. High-definition vision systems require high frame rate for image capturing in order to improve actual resolution for moving objects. To facilitate this, image sensor architecture with column-parallel ADC and digital high-speed interface is of great importance. Particularly, low-power high-speed digital signal readout technique while meeting the requirement of low noise, high dynamic range and high gray-scale resolution are required. In this presentation, present status and future prospects for architecture and topology of the column-parallel A/D converters and related peripheral circuits required for high-definition high-speed image sensors will be discussed.
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Koji YAMADA
Article type: Article
Session ID: IST2013-50
Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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Silicon (Si) photonics technology, which has a DNA of Si electronics technology, would provide a promising photonics-electronics integration platform with superior mass-productivity and cost performance. Using this technology, various photonic devices, such as filters, modulators and detectors, have been developed and are now monolithically integrated on a Si chip. Moreover, photonics-electronics convergence is now being developed intensively. Ultra-compact photonics-electronics module based on this technology would significantly contribute to the construction of energy-efficient, cost-effective information trading systems. Considering material characteristics of Si and present fabrication technology, however, these advantages show trade-off relation to device performances. In this paper, at first, we review the present status of Si photonics technology, and reveal its pros and cons. Then, we discuss about technological obstacles to the practical applications of Si photonics as a multi-purpose photonic integration platform.
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Isao Takayanagi, Norio Yoshimura, Toshiaki Sato, Shinichiro Matsuo, Te ...
Article type: Article
Session ID: IST2013-51
Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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A 1-inch optical format, 80fps, 10.8M-pixel CMOS image sensor for both high-end video and still camera applications is developed. The 80fps readout speed was chosen because of a minimum requirement for a strobe sync speed of 1/60s for mechanical shutter-less still camera use and also for reducing rolling shutter distortion on moving objects. In order to satisfy this frame rate requirement with a minimum increase in analog power consumption, a new pipelined pixel to ADC scheme was introduced and successfully demonstrated with noise performance good enough for high end camera applications.
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Takashi Kobayashi, Yoshiaki Miyamoto, Takayuki Hamamoto
Article type: Article
Session ID: IST2013-52
Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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We propose the image sensor that can control reset and readout timing pattern in block unit. We can obtain pixel information with different frame rate and exposure time length at the same time in the imaging plane by using the proposed image sensor. By performing signal processing for the acquisition information in the subsequent stage, we synthesize image with excellent temporal resolution, spatial resolution and dynamic range. In this paper, we explain the structure of our proposed image sensor and its imaging method.
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Akira MIZUNO, Masayuki IKEBE
Article type: Article
Session ID: IST2013-53
Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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A novel approach for bit-depth expansion is proposed. When displaying a low bit-depth image on a monitor, false contour artifacts tend to appear in the gradation region. Such false contours seriously degrade the image quality. Reconstructing smooth gradations from false contours is crucial yet it remains difficult problem for 2D images. The proposed method enables the 2D interpolation problem to be separated into a 1D problem. An output image with smooth gradations can be obtained by using the Poisson equation.
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Hironori Nakajo
Article type: Article
Session ID: IST2013-54
Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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Smartphones of simple design without hard keys and with Ul by touch panels are increasing in the market. While is in its full swing, flat-screens and full-flat design become a main market trend to differentiate their appearances. And, low-height is strongly demanded for the internal components. Camera modules which require adequate clearance for the corresponding optical designs are not exceptions. A new structural and optical design approach different from common design methodology is proposed in this paper for reducing the cost as much as possible and ensuring the required low-height
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Article type: Appendix
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Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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Article type: Appendix
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Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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Article type: Appendix
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Published: September 23, 2013
Released on J-STAGE: September 21, 2017
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