Silicon oxynitride (SiO
xN
y) films were deposited by plasma-enhanced chemical vapor deposition (PCVD), using silane (SiH
4), nitrious oxide (N
2O) and nitrogen (N
2) as reactive gases. Studies on the mechanical properties and composition of the SiO
xN
y films indicated that an increase in N
2O flow rate leads to an increased SiO
2 molar fraction in SiO
xN
y films, a decrease in microhardness, and change from a compressive stress for Si-N rich films to a tensile stress for Si-O rich films. It was found that there was a good relationship between the SiO
2 molar fraction and the stress and the microhardness of the SiO
xN
y films formed under the various conditions of N
2O flow rate or pressure. Experimental results showed no significant dependence of the microhardness and the composition of the films on the N
2 flow rate, but the residual stress depended on the N
2 flow rate. The residual stress changed from compressive to tensile with increasing N
2 flow rate, indicating that the residual stress in SiO
xN
y film was controlled by N
2 flow rate, while the microhardness and the composition of the films were kept constant. This has been explained in terms of the bombardment effects of N
2 ions against the growing layers, which was confirmed by measuring the optical emission spectrum from a PCVD plasma of an SiH
4-N
2-N
2O gas mixture. A good correlation between the microhardness and the refractive index of the films deposited at constant substrate temperature was found, leading to the conclusion that fairly accurate estimation of microhardness of SiO
xN
y films with thicknesses of 1μm or less was possible through measuring the refractive index.
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