A sintered 0.5mass% Pd/SnO
2 sensor was coated with SiO
2 films to improve the gas-sensing properties. The SiO
2 films were prepared by a simple dip-coating method of three kinds of alkoxysilane solutions of Si(OC
2H
5)
4, CH
3Si(OC
2H
5)
3 and (CH
3)
2Si(OC
2H
5)
2, followed by calcination at 600°C. A uniform, crack-free, but still porous SiO
2 film was obtained only from CH
3Si(OC
2H
5)
3. The use of Si(OC
2H
5)
4 resulted in a film with many cracks, probably because of too much three-dimensional polymerization of the precursor up to 400°C. On the other hand, the alkoxylsilane with two methyl groups left no effective SiO
2 film behind, because a large portion of it decomposed into volatile matters upon heating. The H
2 sensitivity of the Pd/SnO
2 sensor markedly increased with the coating of a crack-free SiO
2 film from CH
3Si(OC
2H
5)
3, especially at 300°C, whereas the sensitivity to CH
4, C
3H
8 and C
2H
5OH decreased. Thus, the SiO
2 coating resulted in a highly sensitive and selective H
2 sensor, though the response and recovery time get prolonged by the coating. In contrast, the coating of a SiO
2 film with many cracks from Si(OC
2H
5)
4 showed no significant effect on the gas-sensing properties.
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